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pro vyhledávání: '"Selçuk Demirezen"'
Autor:
Selçuk Demirezen, Murat Ulusoy, Haziret Durmuş, Halit Cavusoglu, Kurtuluş Yılmaz, Şemsettin Altındal
Publikováno v:
ACS Omega, Vol 8, Iss 49, Pp 46499-46512 (2023)
Externí odkaz:
https://doaj.org/article/c5ca0f551b5d43b48ff606526177ca9b
Autor:
Selçuk DEMİREZEN
Publikováno v:
Gazi Üniversitesi Fen Bilimleri Dergisi, Vol 5, Iss 3, Pp 167-176 (2017)
In this study, the density of interface states (NSS) and series resistance (RS) were examined for both frequency and voltage in PrBaCoO-nanofiber interface layered metal-semiconductor (Au/nSi) structures. For this purpose, capacitance-voltage (C-V) a
Externí odkaz:
https://doaj.org/article/188c3cd350e443f59f3c158dbe4e3c93
Autor:
Selçuk DEMİREZEN
Publikováno v:
Gazi University Journal of Science Part A: Engineering and Innovation. :53-61
Coumarin-PVA is deposited onto p-Si wafers using the spin coating technique. I examined the fundamental electrical variables of the Al/CoumarinPVA/p-Si type Schottky barrier diodes (SBDs), by utilizing capacitance/voltage(C-V) and conductance/volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b22364a09914e12f9ed9fe674a7e4f2
https://doi.org/10.54287/gujsa.1202745
https://doi.org/10.54287/gujsa.1202745
In this paper, an organic interlayer, Rs, and Nss on the transport- mechanisms (TMs), both the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS) (SDs) were performed onto the same Si-wafer in same-conditions. Some electrical parameters of them have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb517324e485d03af3f7166cdbdb9480
https://avesis.gazi.edu.tr/publication/details/7b4bfa79-cf95-4af0-85f4-d97b9ae1f60c/oai
https://avesis.gazi.edu.tr/publication/details/7b4bfa79-cf95-4af0-85f4-d97b9ae1f60c/oai
Autor:
Selçuk Demirezen
Publikováno v:
Volume: 5, Issue: 3 167-176
Gazi University Journal of Science Part C: Design and Technology
Gazi University Journal of Science Part C: Design and Technology
Bu çalışmada PrBaCoO-nanofiber arayüzey tabakalı metal-yarıiletken (Au/n-Si) yapılarda arayüzey durumlarının yoğunluğunun (NSS) ve seri direncin (RS) etkisi hem frekans hem de voltaja bağlı olarak incelendi. Bu amaçla hem kapasitans-ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::504729e0b0626f43176db3a43b0a5be6
https://dergipark.org.tr/tr/pub/gujsc/issue/31140/310410
https://dergipark.org.tr/tr/pub/gujsc/issue/31140/310410