Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Selamnesh Nida"'
Autor:
Martin J. Süess, Romain Peretti, Yong Liang, Johanna M. Wolf, Christopher Bonzon, Borislav Hinkov, Selamnesh Nida, Pierre Jouy, Wondwosen Metaferia, Sebastian Lourdudoss, Mattias Beck, Jérôme Faist
Publikováno v:
Photonics, Vol 3, Iss 2, p 26 (2016)
In this article we present our latest work on the optimization of mid-infrared quantum cascade laser fabrication techniques. Our efforts are focused on low dissipation devices, broad-area high-power photonic crystal lasers, as well as multi-wavelengt
Externí odkaz:
https://doaj.org/article/e465210189134810b33858c85a67ab76
Publikováno v:
IEEE Transactions on Electron Devices. 68:4587-4592
The phenomenon of reduced energy capability of power metal–oxide–semiconductor field-effect transistors (MOSFETs) at high avalanche currents is investigated in commercial 1.2-kV 4H-SiC MOSFETs. Unclamped inductive switching (UIS) measurements as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::933f1f17d92abbf3a061a1b55990d416
https://doi.org/10.1109/ted.2021.3097310
https://doi.org/10.1109/ted.2021.3097310
Autor:
Ulrike Grossner, Selamnesh Nida
Publikováno v:
IEEE Transactions on Electron Devices. 66:1899-1904
Silicon carbide (4H-SiC) devices experiencing avalanche conditions can reach temperatures above 1500 K. Simulation of impact ionization in devices should, therefore, include models valid up to such high temperatures. However, calibrations of impact i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48d6bfbeaddb240ecbc2c231f3f6f6ec
https://doi.org/10.1109/ted.2019.2899285
https://doi.org/10.1109/ted.2019.2899285
Publikováno v:
Materials Science Forum. 924:735-738
When power MOSFETs experience a voltage spike initiating avalanche generation, a large amount of power is dissipated at the device junction. This leads to self-heating and lowers the threshold voltage. Some sources indicate that unintended opening of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93deaa4993563356ce0cd20f7863615b
https://doi.org/10.4028/www.scientific.net/msf.924.735
https://doi.org/10.4028/www.scientific.net/msf.924.735
Publikováno v:
Materials Science Forum, 924
This paper presents an insight into the short circuit (SC) capability of Rohm’s discrete 1.2 kV, 80mΩ state-of-the-art silicon carbide (SiC) double trench metal-oxide-semiconductor field effect transistor (MOSFET). SC measurements are performed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::488af1a4f386ccb5ac140848e4139e7d
https://doi.org/10.4028/www.scientific.net/msf.924.782
https://doi.org/10.4028/www.scientific.net/msf.924.782
Autor:
Oliver Bunk, Thomas Ziemann, Hans Sigg, Alexander Tsibizov, Massimo Camarda, Clemens Schulze-Briese, Ulrike Grossner, Selamnesh Nida, Judith Woerle, Andy Moesch, Salvatore Tudisco, Claude Pradervand
Publikováno v:
Journal of Synchrotron Radiation
Journal of Synchrotron Radiation, 26 (1)
Journal of Synchrotron Radiation, 26 (1)
Journal of Synchrotron Radiation, 26 (1)
ISSN:0909-0495
ISSN:1600-5775
ISSN:0909-0495
ISSN:1600-5775
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ead88401a7f947c08118ae2c9850db77
Autor:
Ivana Kovacevic-Badstuebner, Thomas Ziemann, Selamnesh Nida, Ulrike Grossner, Johanna Mueting, Bhagyalakshmi Kakarla
Publikováno v:
Microelectronics Reliability, 76-77
Reliability represents a very important factor for the design of Silicon Carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs). Ruggedness of the device during abnormal operating conditions like the short circuit (SC) and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7523818e58fc40cb408e955fa629f5fa
https://hdl.handle.net/20.500.11850/192538
https://hdl.handle.net/20.500.11850/192538
Publikováno v:
Journal of Applied Physics, 121 (9)
This work analyzes transport through metal organic chemical vapour deposition grown Iron doped Indium Phosphide (InP:Fe) for use as a current blocking layer in buried heterostructure Quantum Cascade Lasers. The nature of Iron incorporation in InP and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6780c974a37a8c8caa0998cc73be4dd4
Autor:
Jérôme Faist, Pierre Jouy, Wondwosen Metaferia, Christopher Bonzon, Martin J. Süess, Johanna Wolf, Yong Liang, Sebastian Lourdudoss, Borislav Hinkov, Romain Peretti, Selamnesh Nida, Mattias Beck
Publikováno v:
Photonics; Volume 3; Issue 2; Pages: 26
Photonics, Vol 3, Iss 2, p 26 (2016)
Photonics, 3 (2)
Photonics, Vol 3, Iss 2, p 26 (2016)
Photonics, 3 (2)
In this article we present our latest work on the optimization of mid-infrared quantum cascade laser fabrication techniques. Our efforts are focused on low dissipation devices, broad-area high-power photonic crystal lasers, as well as multi-wavelengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::affe4c575a6bfba14df80b07201098e6