Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Sekwon Na"'
Autor:
Chang-Hyun Kim, Young-Chang Joo, Myung-Han Yoon, Sekwon Na, Sungjun Park, Sujin Sung, Jun-Gyu Choi, Won-June Lee
Publikováno v:
ACS Applied Materials & Interfaces. 13:2820-2828
In this research, we report the rapid and reliable formation of high-performance nanoscale bilayer oxide dielectrics on silicon substrates via low-temperature deep ultraviolet (DUV) photoactivation. The optical analysis of sol-gel aluminum oxide film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23d803106efb95bce81425d5128930a3
https://doi.org/10.1021/acsami.0c18118
https://doi.org/10.1021/acsami.0c18118
Autor:
Young-Chang Joo, Sol-Kyu Lee, Baek Jong-Min, Wookyung You, Ok-Hee Park, Hyeok-Sang Oh, Sekwon Na, So-Yeon Lee, Kyung-Tae Jang, Rak-Hwan Kim
Publikováno v:
IEEE Electron Device Letters. 39:1050-1053
Ruthenium (Ru) and cobalt (Co) are new candidates for the replacement of physical vapor deposition tantalum (Ta) in liner materials because Ru and Co have excellent Cu-filling properties when deposited using chemical vapor deposition (CVD). Under acc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42760464854e8574271e1c83db49062c
https://doi.org/10.1109/led.2018.2840507
https://doi.org/10.1109/led.2018.2840507
Publikováno v:
Electronic Materials Letters. 14:426-431
Performance enhancement has been studied for thin-film thermoelectric materials for small-scale energy applications. The microstructural evolution of bismuth telluride (Bi2Te3) was investigated with respect to performance enhancement via in situ ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b3d96063b94c6ffc2fd03a461090f9
https://doi.org/10.1007/s13391-018-0054-x
https://doi.org/10.1007/s13391-018-0054-x
Autor:
Young-Joo Lee, Sekwon Na, So-Yeon Lee, In-Kyoung Ahn, Young-Chang Joo, Jihoon Lee, Dae-Hyun Nam
Publikováno v:
ACS applied materialsinterfaces. 10(3)
Despite the high theoretical specific capacity of Si, commercial Li-ion batteries (LIBs) based on Si are still not feasible because of unsatisfactory cycling stability. Herein, amorphous Si (a-Si)-coated nanocrystalline Si (nc-Si) formed by versatile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::819e0ae9b88128ac77669c02147cd50f
https://pubmed.ncbi.nlm.nih.gov/29308877
https://pubmed.ncbi.nlm.nih.gov/29308877
Autor:
Hoo-Jeong Lee, Jun-gu Kang, Nam-Suk Lee, Chan Gyung Park, Sekwon Na, Hyoungsub Kim, Seok-Hee Lee, Juyun Choi
Publikováno v:
Acta Materialia. 92:1-7
In this study, we investigated the effects of Mo addition to Yb as a contact material with Si for metal–oxide-semiconductor field-effect transistors (MOSFETs) to mitigate oxidation problems, a persistent problem for rare-earth metal-based contacts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::091cb8e1d33b606798ad1b16eac91136
https://doi.org/10.1016/j.actamat.2015.03.041
https://doi.org/10.1016/j.actamat.2015.03.041
Autor:
Hyoungsub Kim, Seongheum Choi, Juyun Choi, Sekwon Na, Hoo Jeong Lee, Yu Seon Kang, Mann Ho Cho
Publikováno v:
ACS Applied Materials & Interfaces. 6:14712-14717
An ultrathin Ni interlayer (∼1 nm) was introduced between a TaN-capped Er film and a Si substrate to prevent the formation of surface defects during thermal Er silicidation. A nickel silicide interfacial layer formed at low temperatures and incurre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ad3756fa06b6683f6ac6d6fae2cecc4
https://doi.org/10.1021/am503626g
https://doi.org/10.1021/am503626g
Autor:
Sung-Yup Jung, Ohsung Song, Young-Joo Lee, Han-Wool Yeon, Sekwon Na, Jong-Seung Park, Young-Chang Joo, Hoo-Jeong Lee, Yongyoon Choi
Publikováno v:
Electronic Materials Letters. 10:275-279
The influence of morphology on the performance of TiN diffusion barriers was studied by investigating the effects of film thickness and deposition rate. Increasing the TiN film thickness was ineffective in preventing Cu migration due to the columnar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf771af1691297ab15895be963c8f397
https://doi.org/10.1007/s13391-013-3108-0
https://doi.org/10.1007/s13391-013-3108-0
Autor:
Hoo-Jeong Lee, Sekwon Na, Minsub Oh, Seungmin Hyun, Chang-Su Woo, Sung-Soo Kim, Jun-Ho Jeong, Younghak Song
Publikováno v:
ECS Electrochemistry Letters. 2:A102-A105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8f19a4fc2fbf62e2342733e67694ba6
https://doi.org/10.1149/2.009309eel
https://doi.org/10.1149/2.009309eel
Publikováno v:
Journal of Alloys and Compounds. 563:124-129
In this study, we systematically investigated the effects of employing Group IV-B metals (Ti, Zr, and Hf) in place of Ga in GaInZnO films by fabricating XInZnO films (X = Ti, Zr, or Hf) with a various ratio of the Group IV-B elements. Materials chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::851bbcd9018633a680e9117ee32b03d5
https://doi.org/10.1016/j.jallcom.2012.12.105
https://doi.org/10.1016/j.jallcom.2012.12.105
Autor:
Sekwon Na, Stephen Dongmin Kang, Seong-jae Jeon, Seungmin Hyun, Haseok Jeon, Hoo-Jeong Lee, Ho-Ki Lyeo
Publikováno v:
Journal of Alloys and Compounds. 553:343-349
This paper reports the results of a study on the microstructure evolution of sputtered BiSb–Te thermoelectric films during post-annealing and its effects on their electronic transport and thermoelectric properties. Combining X-ray diffraction, tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0020ac063d65648698b9f66e9868cde0
https://doi.org/10.1016/j.jallcom.2012.11.040
https://doi.org/10.1016/j.jallcom.2012.11.040