Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Sekhar Reddy Kola"'
Autor:
Sekhar Reddy Kola, Yiming Li
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 4, Pp 229-238 (2023)
Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE o
Externí odkaz:
https://doaj.org/article/114d68a192984ae1ae3fcba7287bdf59
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 4, Pp 181-194 (2023)
Machine learning (ML) is poised to play an important part in advancing the predicting capability in semiconductor device compact modeling domain. One major advantage of ML-based compact modeling is its ability to capture complex relationships and pat
Externí odkaz:
https://doaj.org/article/3e79a3762dfe400e8c75ebe7bf0c5da3
Publikováno v:
IEEE Access, Vol 11, Pp 90421-90429 (2023)
In this article, the performance of 3-D nanosheet FET (NS-FET) in inversion (INV) and junctionless (JL) modes is demonstrated and compared at both device and circuit levels. In JL mode, the ON current ( $I_{\mathrm {ON}}$ ) rises with an increase in
Externí odkaz:
https://doaj.org/article/23bc93325bfa444aae1c108d24cc0eb5
Publikováno v:
IEEE Access, Vol 10, Pp 71356-71369 (2022)
The sensitivity of semiconductor devices to any microscopic perturbation is increasing with the continuous shrinking of device technology. Even the small fluctuations have become more acute for highly scaled nano-devices. Therefore, these fluctuation
Externí odkaz:
https://doaj.org/article/a1f0b27fd3eb425bb549570d4c701fb7
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 1, Pp 38-46 (2020)
This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (LOV). The scope of the work is to explore the performance boost and optimizati
Externí odkaz:
https://doaj.org/article/5a0bd6a773fe427a8e05ee0cc423f5f5
Publikováno v:
IEEE Transactions on Electron Devices. :1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b47af22cb2ddd336cb5daf48a3a0f5b6
https://doi.org/10.1109/ted.2023.3269410
https://doi.org/10.1109/ted.2023.3269410
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 70:4835-4848
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dba46379f87c4606f4042a98c934e3dc
https://doi.org/10.1109/tmtt.2022.3198659
https://doi.org/10.1109/tmtt.2022.3198659
Publikováno v:
2023 24th International Symposium on Quality Electronic Design (ISQED).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05d24dcaf3f36500684aa65090809185
https://doi.org/10.1109/isqed57927.2023.10129391
https://doi.org/10.1109/isqed57927.2023.10129391
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e1d900b9b75aef3963b5108b92acab3
https://doi.org/10.1109/edtm55494.2023.10103120
https://doi.org/10.1109/edtm55494.2023.10103120
Publikováno v:
2022 IEEE 22nd International Conference on Nanotechnology (NANO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e03e43ca3af26d72b0f177f1957906a1
https://doi.org/10.1109/nano54668.2022.9928645
https://doi.org/10.1109/nano54668.2022.9928645