Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Sejuti Bardhan"'
Resistive Random Access Memories (ReRAMs) are considered amongst the most promising candidates to replace silicon-based memories. However, ReRAMs suffer from reliability issues associated to faults affecting their resistive elements and their selecto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::589236ebff5a25465ef72ae93293a5e9
http://hdl.handle.net/11585/842646
http://hdl.handle.net/11585/842646
