Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Sejoon, Kim"'
Publikováno v:
Brain and Behavior, Vol 14, Iss 5, Pp n/a-n/a (2024)
Abstract Background There have been multiple reports about the occurrence of dysphagia after the contraction of coronavirus disease 2019 (COVID‐19). However, a detailed pathology and epidemiologic relation between COVID‐19 infection and dysphagia
Externí odkaz:
https://doaj.org/article/e82fff118bd7410286547813897b5948
Autor:
Akshay Sahota, Harrison Sejoon Kim, Jaidah Mohan, Dan N. Le, Yong Chan Jung, Si Joon Kim, Jang-Sik Lee, Jinho Ahn, Heber Hernandez-Arriaga, Jiyoung Kim
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115213-115213-6 (2021)
In this work, a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector via a facile co-sputtering technique is investigated without using an Ag active metal layer. The effects of the Ag concentration with respect to OFF-state leaka
Externí odkaz:
https://doaj.org/article/b23446ec68ee4627bd08cd91c934ad9d
Autor:
Takashi Onaya, Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Chang-Yong Nam, Esther H. R. Tsai, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura
Publikováno v:
APL Materials, Vol 9, Iss 3, Pp 031111-031111-7 (2021)
The change in the interplanar spacing (d-spacing) including the ferroelectric orthorhombic (O) phase in the low-temperature fabricated HfxZr1−xO2 (HZO) films was studied using synchrotron grazing-incidence wide-angle x-ray scattering analysis. The
Externí odkaz:
https://doaj.org/article/50801335661441aabebc8c36c2d13af2
Autor:
Hye Ryeon Park, Jeong Gyu Yoo, Jong Mook Kang, Min Kwan Cho, Taeho Gong, Seongbin Park, Seungbin Lee, Jin-HYun Kim, Seojun Lee, Rino Choi, Harrison Sejoon Kim, Yong Chan Jung, Jiyoung Kim, Si Joon Kim
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4d526f9ecae4befa09c59a1dc5c6a69
https://doi.org/10.1109/edtm55494.2023.10103015
https://doi.org/10.1109/edtm55494.2023.10103015
Autor:
Jang-Sik Lee, Yong Chan Jung, Harrison Sejoon Kim, Akshay Sahota, Dan N. Le, Jinho Ahn, Heber Hernandez-Arriaga, Jaidah Mohan, Jiyoung Kim, Si Joon Kim
Publikováno v:
IEEE Electron Device Letters. 43:21-24
In this letter, a threshold switching (TS) selector with Ag doping-based nano-polycrystalline ZnO switching layer (SL) having (002) preferred orientation has been manifested, without incorporating an active Ag metal layer, using a facile co-sputterin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e87dee57e9aa912ad0ee6ac1f69924a
https://doi.org/10.1109/led.2021.3130828
https://doi.org/10.1109/led.2021.3130828
Publikováno v:
Clinical Neurophysiology. 140:1-3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d5d442d241fa59131ab851c19046db0
https://doi.org/10.1016/j.clinph.2022.05.005
https://doi.org/10.1016/j.clinph.2022.05.005
Autor:
Jaidah Mohan, Akshay Sahota, Si Joon Kim, Jang-Sik Lee, Harrison Sejoon Kim, Min-Ji Kim, Yong Chan Jung, Antonio T. Lucero, Jiyoung Kim, Rino Choi
Publikováno v:
ACS Applied Electronic Materials. 3:2309-2316
Leakage current, that causes interferences in the read/write operation, arising from neighboring unselected or half-selected memory cells is considered as one of the main hurdles to be overcome to ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c670b86dd70cf72d7431292f666d4e0
https://doi.org/10.1021/acsaelm.1c00197
https://doi.org/10.1021/acsaelm.1c00197
Autor:
Dan N. Le, Jinho Ahn, Byung Keun Hwang, Xiaobing Zhou, Lance Lee, Yong Chan Jung, Jiyoung Kim, Harrison Sejoon Kim, Akshay Sahota, Arul Vigneswar Ravichandran, Si Joon Kim, Jaebeom Lee, Su Min Hwang
Publikováno v:
ACS Applied Nano Materials. 4:2558-2564
In recent times, the requirements have become extremely stringent for employing silicon nitride (SiNx) films in various types of applications. For instance, high etch resistance coating is required...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb5391f4ee58adf1e60a4537f6199180
https://doi.org/10.1021/acsanm.0c03203
https://doi.org/10.1021/acsanm.0c03203
Autor:
Yong Chan Jung, Toshihide Nabatame, Heber Hernandez-Arriaga, Naomi Sawamoto, Takahiro Nagata, Takashi Onaya, Jaidah Mohan, Harrison Sejoon Kim, Mari Inoue, Jiyoung Kim, Atsushi Ogura
Publikováno v:
ECS Transactions. 98:63-70
HfxZr1−xO2 (HZO) has been an attractive material for future ferroelectric memory devices because of their high scalability ~10 nm, stable ferroelectricity over a wide Hf:Zr composition range, and compatibility with CMOS manufacturing process. [1] C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34edae7e4603bef07c8ef7171b6ff4fd
https://doi.org/10.1149/09803.0063ecst
https://doi.org/10.1149/09803.0063ecst
Autor:
Yong Chan Jung, Xiaobing Zhou, Xin Meng, Arul Vigneswar Ravichandran, Harrison Sejoon Kim, Jinho Ahn, Si Joon Kim, Young-Chul Byun, Byung Keun Hwang, Su Min Hwang, Akshay Sahota, Jiyoung Kim, Lance Lee
Publikováno v:
Journal of Materials Chemistry C. 8:13033-13039
Trisilylamine (TSA), an exemplary chlorine and carbon-free commercial silylamine precursor, is well-known to induce improvements in the process and properties of silicon nitride (SiNx) thin films grown using atomic layer deposition (ALD). Herein, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d76b98a0a36945baa9460769f3e92ca1
https://doi.org/10.1039/d0tc02866e
https://doi.org/10.1039/d0tc02866e