Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Seiya ISHIHARA"'
Autor:
Kentaro Matsuura, Jun'Ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1246-1252 (2018)
We have fabricated large area integrated top-gate ${n}$ MISFETs with sputter-deposited-MoS2 film having n-type operation. A sputtering method enables us to form a large-area MoS2 thin film followed by H2S annealing to compensate sulfur vacancies. Two
Externí odkaz:
https://doaj.org/article/a83116f24e794cb490cc4ec8810be61b
Autor:
Atsushi Ogura, Naomi Sawamoto, Yuya Oyanagi, Kentaro Matsuura, Hitoshi Wakabayashi, Seiya Ishihara, Yusuke Hibino, Masaya Hamada, Takuro Sakamoto
Publikováno v:
Vacuum and Surface Science. 62:611-616
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54aeccc0b2936f49afff995803fddfd2
https://doi.org/10.1380/vss.62.611
https://doi.org/10.1380/vss.62.611
Autor:
Yuya Oyanagi, Yusuke Hibino, Hitoshi Wakabayashi, Takumi Ohashi, Naomi Sawamoto, Kentarou Matsuura, Seiya Ishihara, Atsushi Ogura
Publikováno v:
ECS Transactions. 85:531-539
In this study, sputtering deposition has been used to fabricate molybdenum disulfide (MoS2). The problem with sputtering deposition of MoS2 is desorption of S atoms from the film when the substrate is brought to high temperature in order to obtain hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b99a8c91668e25253a64120c0375979f
https://doi.org/10.1149/08513.0531ecst
https://doi.org/10.1149/08513.0531ecst
Autor:
Kentarou Matsuura, Hideaki Machida, Naomi Sawamoto, H. Wakabayashi, Seiya Ishihara, Masato Ishikawa, Yusuke Hibino, Takumi Ohashi, Atsushi Ogura, Sudo Hiroshi
Publikováno v:
MRS Advances. 3:321-326
We report the investigation on the properties of a novel Te precursor (i-C3H7)2Te and its effectiveness in fabricating MoTe2. The vapor pressure of the precursor was obtained by measuring the pressure as a function of its temperature in a sealed cham
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ed35b00ded802debdb3ee6a7baf2894
https://doi.org/10.1557/adv.2018.126
https://doi.org/10.1557/adv.2018.126
Autor:
Atsushi Ogura, Yusuke Hibino, Naomi Sawamoto, Hideaki Machida, Seiya Ishihara, H. Wakabayashi
Publikováno v:
MRS Advances. 3:379-384
Metal organic precursor has a sufficiently high vapor pressure at low temperature, contributing high-speed low-temperature MOCVD-MoS2 film formation. We fabricated monolayer MoS2 by 1 step cold-wall MOCVD using di-isopropyl-diazadiene-molybdenum tric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::209278d04e8740402fb795244a4fc5e8
https://doi.org/10.1557/adv.2018.237
https://doi.org/10.1557/adv.2018.237
Autor:
Hitoshi Wakabayashi, Takumi Ohashi, Atsushi Ogura, Yusuke Hibino, Seiya Ishihara, Kentarou Matsuura, Hideaki Machida, Naomi Sawamoto
Publikováno v:
Journal of Materials Research. 32:3021-3028
MoS2(1−x)Te2 x thin films were fabricated by high-temperature co-sputtering deposition and post-deposition tellurization annealing using novel Te precursor (i-C3H7)2Te for the first time. As a result, high crystal quality MoS2(1−x)Te2x (6.5 nm) w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a6766637ed0a472a03f78c9a66a71fb
https://doi.org/10.1557/jmr.2017.306
https://doi.org/10.1557/jmr.2017.306
Autor:
Yusuke Hibino, Takumi Ohashi, Seiya Ishihara, Hideaki Machida, Naomi Sawamoto, H. Wakabayashi, Masato Ishikawa, Kentarou Matsuura, Atsushi Ogura, Sudo Hiroshi
Publikováno v:
MRS Advances. 2:1557-1562
We report the synthesis of MoS2(1-x)Te2x by co-sputtering deposition and effect of mixture on its bandgap. The deposition was carried out at room temperature, and the sputtering power on individual MoS2 and MoTe2 targets were varied to obtain films w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ff5d7467ee4741e7a7ad85bf4dc48ba
https://doi.org/10.1557/adv.2017.125
https://doi.org/10.1557/adv.2017.125
Autor:
Hitoshi Wakabayashi, Yuya Oyanagi, Kota Yamazaki, Naomi Sawamoto, Yusuke Hibino, Hideaki Machida, Masato Ishikawa, Seiya Ishihara, Yusuke Hashimoto, Hiroshi Sudoh, Atsushi Ogura
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
Recently, layered material, especially transition metal dichalcogenides (TMDs) are attracting growing attention due to its unique physical properties and wide possibility in applications. In this study, the fabrication of a TMD alloy, MoS 2(1-x) Te 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7199964d08765410e9e69281ff8a3c22
https://doi.org/10.1109/edtm.2019.8731258
https://doi.org/10.1109/edtm.2019.8731258
Publikováno v:
The Proceedings of Mechanical Engineering Congress, Japan. 2021:J065-03
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cbdf158a43e0020c707b4e4c20731e8
https://doi.org/10.1299/jsmemecj.2021.j065-03
https://doi.org/10.1299/jsmemecj.2021.j065-03
Autor:
Yusuke Hibino, Masato Ishikawa, Seiya Ishihara, Hitoshi Wakabayashi, Takumi Ohashi, Hideaki Machida, Kentarou Matsuura, Naomi Sawamoto, Atsushi Ogura
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:Q3012-Q3015
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e474680f3a14c72d36ed547df3d4724f
https://doi.org/10.1149/2.0031611jss
https://doi.org/10.1149/2.0031611jss