Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Seishu, B."'
Publikováno v:
Proceedings of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1986 Jun 01. 405(1829), 345-353.
Externí odkaz:
https://www.jstor.org/stable/2397982
Publikováno v:
IndraStra Global.
The resistivity of selenium-doped n-InP single crystal layers grown by liquid-phase epitaxy with electron concentrations varying from 6.7 x 10$^18$ to 1.8 x 10$^20$ cm$^{-3}$ has been measured as a function of hydrostatic pressure up to 10 GPa. Semic