Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Seiro Miyoshi"'
Autor:
Koutarou Sho, Hidefumi Mukai, Seiro Miyoshi, Satoshi Usui, Tsuyoshi Morisaki, Naoki Sato, Shinji Yamaguchi, Kazunori Iida, Ken Furubayashi
Publikováno v:
SPIE Proceedings.
The Self-Aligned Quadruple Patterning (SAQP) process is one of the most suitable techniques for the patterning of under-20 nm half-pitch lines and spaces (L/S) patterns because it requires only one lithography step, resulting in a relatively low proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::795f83134d4511ab314fc698dc440e5a
https://doi.org/10.1117/12.2218416
https://doi.org/10.1117/12.2218416
Publikováno v:
physica status solidi (c). :2753-2756
We have determined the complex dielectric functions of GaP1−xNx alloys using spectroscopic ellipsometry to clarify the electronic structure. With increasing N concentration, the E1-gap peak height for both e1 and e2 decreases and the E1-gap energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0daa301a8629d1dfd4dc1925bdd88809
https://doi.org/10.1002/pssc.200303430
https://doi.org/10.1002/pssc.200303430
Publikováno v:
Journal of Photopolymer Science and Technology. 15:699-706
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fbd536b438ad46f043a38d7b8b89815
https://doi.org/10.2494/photopolymer.15.699
https://doi.org/10.2494/photopolymer.15.699
Autor:
Y. Ohiwa, and S.Yoshikawa, Y. Nakano, Hiromichi Ohta, and H. Matsuyama, Eishi Shiobara, M. Abe, Yasunori Sato, Y. Onishi, Seiro Miyoshi, Shuzi Hayase
Publikováno v:
Chemistry of Materials. 13:2186-2194
Fundamental aspects for a novel LSI pattern fabrication process employing polysilanes as an antireflective layer (ARL) are discussed. The multilayer is composed of an organic resist, a polysilane layer, and a substrate. The polysilane avoids reflecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fb1b05a67d8d1e3cfdec35123abe393
https://doi.org/10.1021/cm010099o
https://doi.org/10.1021/cm010099o
Autor:
Seiichi Ishikawa, T. Yamazaki, Toshio Itani, Seiro Miyoshi, Minoru Toriumi, Manabu Watanabe, Takuya Naito
Publikováno v:
Journal of Photopolymer Science and Technology. 14:595-601
Fluoropolymers are promising materials for the single-layer resists used in 157-nm lithography. The fluoropolymer positive-tone resists we studied showed high optical transparencies at 157nm (absorption coefficients of 0.01 to 2μm-1), their dry-etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fa4d59195a440df52a5240f3cd919f2
https://doi.org/10.2494/photopolymer.14.595
https://doi.org/10.2494/photopolymer.14.595
Autor:
Hideto Matsuyama, Seiro Miyoshi, Shuji Hayase, Yoshihiko Nakano, Yasunobu Onishi, Yasuhiko Sato
Publikováno v:
Journal of Photopolymer Science and Technology. 12:663-668
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ba258b59d5b0464a358401621cd9cc9
https://doi.org/10.2494/photopolymer.12.663
https://doi.org/10.2494/photopolymer.12.663
Autor:
Yasuhiro Shiraki, Seiro Miyoshi, Kentaro Onabe, Ryoichi Ito, Daiichiro Aoki, Hiroyuki Yaguchi, Goshi Biwa, Keisuke Arimoto
Publikováno v:
Journal of Crystal Growth. :496-499
We report on the temperature dependence of photoluminescence (PL) in GaP 1-x N x alloys. With increasing temperature the feature of the PL spectrum changes considerably and the luminescence with lower energies becomes predominant. This is explained b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56ea358e635f2750662c7c426e5a3425
https://doi.org/10.1016/s0022-0248(98)00338-8
https://doi.org/10.1016/s0022-0248(98)00338-8
Autor:
Goshi Biwa, Ryoichi Ito, Masaya Kibune, Seiro Miyoshi, Kentaro Onabe, Yasuhiro Shiraki, Hiroyuki Yaguchi
Publikováno v:
Journal of Crystal Growth. 170:353-356
We have investigated the conduction-band-edge formation in GaP 1-x N x alloys by nitrogen incorporation into GaP using photoluminescence excitation (PLE) spectroscopy. The PLE spectra of GaP 1-x N x alloys with various nitrogen concentrations show th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8ef7417478b7cce281f5f86191a0783
https://doi.org/10.1016/s0022-0248(96)00592-1
https://doi.org/10.1016/s0022-0248(96)00592-1
Autor:
Shoji Mimotogi, Tomoko Ojima, Masanari Kajiwara, Kazuhiro Takahata, Seiro Miyoshi, Kohji Hashimoto, Hideaki Abe
Publikováno v:
SPIE Proceedings.
We have created a model that uses discriminant function analysis to predict failures in etched hole patterning of the type that induces an open-contact failure by using critical dimension scanning electron microscope (CDSEM) measurement values of aft
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f139a4a7af1388fad1ba34fb64786063
https://doi.org/10.1117/12.916029
https://doi.org/10.1117/12.916029
Autor:
Hiroyuki Yaguchi, Seiro Miyoshi, Ryoichi Ito, Kentaro Onabe, Masaki Nagahara, Yasuhiro Shiraki
Publikováno v:
Journal of Crystal Growth. 145:197-202
The metalorganic vapor phase epitaxy (MOVPE) growth of cubic GaN has been performed on the patterned GaAs(100) substrates which have (111)A or (111)B facets. It is found that the growth features are strongly dependent on the configuration of the patt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35659dabc6a52c332af1a649bb957641
https://doi.org/10.1016/0022-0248(94)91050-2
https://doi.org/10.1016/0022-0248(94)91050-2