Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Seiji Yamahira"'
Autor:
Toru Okino, Seiji Yamahira, Shota Yamada, Yutaka Hirose, Akihiro Odagawa, Yoshihisa Kato, Tsuyoshi Tanaka
Publikováno v:
Sensors, Vol 18, Iss 1, p 314 (2018)
We have developed a real time ultraviolet (UV) imaging system that can visualize both invisible UV light and a visible (VIS) background scene in an outdoor environment. As a UV/VIS image sensor, an organic photoconductive film (OPF) imager is employe
Externí odkaz:
https://doaj.org/article/e601bc7f13e044da8e14e25d6688923d
Autor:
Tsuyoshi Tanaka, Yugo Nose, Yutaka Hirose, Seiji Yamahira, Toru Okino, Motonori Ishii, Kentaro Nakanishi, Akito Inoue, Mitsuyoshi Mori, Shigeru Saito, Manabu Usuda, Shigetaka Kasuga, Tatsuya Kabe, Akihiro Odagawa, Shinzo Koyama
Publikováno v:
ISSCC
The intensive development of Single-photon avalanche photodiode (SPAD) based CMOS image sensors (CIS) continues, with rapid progress [1–6]. Yet, due to unestablished quenching operation [5,6], realization of SPADs onto a CIS alongside conventional
Autor:
Seiji Yamahira, Tsuyoshi Tanaka, Akihiro Odagawa, Yusuke Sakata, Yutaka Hirose, Mitsuyoshi Mori, Manabu Usuda, Shigetaka Kasuga, Yumiko Kato
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We present a sensitivity-boosting technique by incorporating an avalanche photodiode into a normal photo-conversion region. Under a dark scene, an avalanche photodiode operation is selected, where the photo-electrons are multiplied up to 105 electron
Publikováno v:
Journal of Crystal Growth. :275-281
The two-step growth process of GaN layer on sapphire using a buffer layer deposited at room temperature has been investigated by in situ reflection high-energy electron diffraction and atomic force microscopy observations. A stepped and (9×9) recons
Publikováno v:
MRS Proceedings. 512
The nitridation process of (111)Si surface has been studied by in-situ reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) measurements. It has been clarified that the nitridation of the Si surface is occurred ev