Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Seigou Yukutake"'
Autor:
Y. Takeuchi, Noboru Akiyama, M. Amishiro, Yasuyuki Kojima, Minehiro Nemoto, Nobuyasu Kanekawa, Atsuo Watanabe, Takayuki Iwasaki, Seigou Yukutake
Publikováno v:
IEEE Transactions on Electron Devices. 49:895-901
We have developed a multichannel monolithic isolator that can provide 2.3 kV ac isolation and 100-MHz signal transmission. The isolator uses high-voltage, on-chip isolator technology including trench isolation with buried oxide on the silicon-on-oxid
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
A 4.5-kV voltage level-shift circuit with a multi-chip structure composed of upper and lower arm driver ICs and dedicated discrete IGBTs was developed. It was experimentally confirmed that this level-shift circuit could drive a 3.3-kV/1200-A IGBT mod
Autor:
Minehiro Nemoto, Takayuki Hashimoto, Y. Yuyama, Seigou Yukutake, Yasuyuki Kojima, A. Watanebe, M. Amishiro, Nobuyasu Kanekawa, Y. Takeuchi
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
We have developed a monolithic isolator that provides an isolation voltage of 4 kV and a signal transmission rate of 100 Mbps. Two circuit areas are isolated using 34 trenches on a bonded SOI with 3-µm-thick buried oxide. The inequality in the volta
Autor:
M. Amishiro, Yasuyuki Kojima, Atsuo Watanabe, Minehiro Nemoto, Nobuyasu Kanekawa, Takayuki Iwasaki, Seigou Yukutake, Noboru Akiyama, Y. Takeuchi
Publikováno v:
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
We have developed a multi-channel monolithic isolator IC that can provide 2.3 kVac isolation and 100 MHz signal transmission. This IC uses high voltage on-chip isolator technology using trench isolation with buried oxide on the SOI substrate and 0.4
Autor:
Yasuyuki Kojima, Y. Tekeuchi, Takayuki Iwasaki, A. Yano, Shima Yasuo, Minehiro Nemoto, Seigou Yukutake, Takami Kazuhisa, Nobuyasu Kanekawa
Publikováno v:
Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044).
This paper presents an isolated analog front-end (I-AFE) LSI with built-in isolation function for V.90, 56 kbps modems. The LSI has 1.5 kVrms. AC isolation and analog front-end functions within a 5 mm/spl times/4.5 mm die with 0.4 /spl mu/m SOI CMOS