Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Seifert, Max"'
Autor:
Seifert, Max, Shepard, Matthew
Publikováno v:
Colorado Review; August 2024, Vol. 51 Issue: 2 p132-139, 8p
Autor:
Brenneis, Andreas, Gaudreau, Louis, Seifert, Max, Karl, Helmut, Brandt, Martin S., Huebl, Hans, Garrido, Jose A., Koppens, Frank H. L., Holleitner, Alexander W.
Nonradiative transfer processes are often regarded as loss channels for an optical emitter1, since they are inherently difficult to be experimentally accessed. Recently, it has been shown that emitters, such as fluorophores and nitrogen vacancy cente
Externí odkaz:
http://arxiv.org/abs/1408.1864
Autor:
Hauf, Moritz V., Simon, Patrick, Seifert, Max, Holleitner, Alexander W., Stutzmann, Martin, Garrido, Jose A.
Publikováno v:
Phys. Rev. B 89, 115426 (2014)
Undoped diamond, a remarkable bulk electrical insulator, exhibits a high surface conductivity in air when the surface is hydrogen-terminated. Although theoretical models have claimed that a two-dimensional hole gas is established as a result of surfa
Externí odkaz:
http://arxiv.org/abs/1310.8616
Autor:
Margapoti, Emanuela, Strobel, Philipp, Asmar, Mahmoud M, Seifert, Max, Li, Juan, Sachsenhauser, Matthias, Ceylan, Oezlem, Palma, Carlos-Andres, Barth, Johannes V., garrido, jose, Cattani-Scholz, Anna, Ulloa, Sergio E., Finley, Jonathan
Publikováno v:
Nano letters 14 (12), 6823-6827, 2014
The perfect transmission of charge carriers through potential barriers in graphene (Klein tunneling) is a direct consequence of the Dirac equation that governs the low-energy carrier dynamics. As a result, localized states do not exist in unpatterned
Externí odkaz:
http://arxiv.org/abs/1308.0552
This paper provides an overview on graphene solution-gated field effect transistors (SGFETs) and their applications in bioelectronics. The fabrication and characterization of arrays of graphene SGFETs is presented and discussed with respect to compet
Externí odkaz:
http://arxiv.org/abs/1302.1418
Autor:
Hess, Lucas H., Hauf, Moritz V., Seifert, Max, Speck, Florian, Seyller, Thomas, Stutzmann, Martin, Sharp, Ian D., Garrido, Jose A.
Publikováno v:
Appl. Phys. Lett. 99, 033503 (2011)
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor deposition grow
Externí odkaz:
http://arxiv.org/abs/1105.6332
Publikováno v:
In Diamond & Related Materials August 2014 47:46-52
Autor:
Seifert, Max
Publikováno v:
Greensboro Review; Spring2024, Issue 115, p54-55, 2p
Autor:
Seifert, Max
Publikováno v:
Litmosphere: Journal of Charlotte Lit; Spring2024, Issue 3, p108-109, 2p
Autor:
Brenneis, Andreas, Gaudreau, Louis, Seifert, Max, Karl, Helmut, Brandt, Martin S., Huebl, Hans, Garrido, Jose A, Koppens, Frank H. L., Holleitner, Alexander W.
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
Universitat Jaume I
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
Universitat Jaume I
Non-radiative transfer processes are often regarded as loss channels for an optical emitter1 because they are inherently difficult to access experimentally. Recently, it has been shown that emitters, such as fluorophores and nitrogen-vacancy centres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::98045d752249c120f0565bc48de298a3
http://hdl.handle.net/2117/26689
http://hdl.handle.net/2117/26689