Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Seidler, Inga"'
Autor:
Ferrero, Julian, Koch, Thomas, Vogel, Sonja, Schroller, Daniel, Adam, Viktor, Xue, Ran, Seidler, Inga, Schreiber, Lars R., Bluhm, Hendrik, Wernsdorfer, Wolfgang
Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still widely unexplored quantitatively. In this letter we present the results of
Externí odkaz:
http://arxiv.org/abs/2405.00238
Autor:
Xue, Ran, Beer, Max, Seidler, Inga, Humpohl, Simon, Tu, Jhih-Sian, Trellenkamp, Stefan, Struck, Tom, Bluhm, Hendrik, Schreiber, Lars R.
Publikováno v:
Nat Commun 15, 2296 (2024)
The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrm{\mu}$m and is operated
Externí odkaz:
http://arxiv.org/abs/2306.16375
Autor:
Künne, Matthias, Willmes, Alexander, Oberländer, Max, Gorjaew, Christian, Teske, Julian D., Bhardwaj, Harsh, Beer, Max, Kammerloher, Eugen, Otten, René, Seidler, Inga, Xue, Ran, Schreiber, Lars R., Bluhm, Hendrik
Publikováno v:
Nat Commun 15, 4977 (2024)
Quantum processor architectures must enable scaling to large qubit numbers while providing two-dimensional qubit connectivity and exquisite operation fidelities. For microwave-controlled semiconductor spin qubits, dense arrays have made considerable
Externí odkaz:
http://arxiv.org/abs/2306.16348
Autor:
Seidler, Inga, Neul, Malte, Kammerloher, Eugen, Künne, Matthias, Schmidbauer, Andreas, Diebel, Laura, Ludwig, Arne, Ritzmann, Julian, Wieck, Andreas D., Bougeard, Dominique, Bluhm, Hendrik, Schreiber, Lars R.
Publikováno v:
Phys. Rev. Applied 20, 044058 (2023)
Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulation tools f
Externí odkaz:
http://arxiv.org/abs/2303.13358
Autor:
Langrock, Veit, Krzywda, Jan A., Focke, Niels, Seidler, Inga, Schreiber, Lars R., Cywiński, Łukasz
Publikováno v:
PRX Quantum 4, 020305 (2023)
Silicon spin qubits stand out due to their very long coherence times, compatibility with industrial fabrication, and prospect to integrate classical control electronics. To achieve a truly scalable architecture, a coherent mid-range link that moves t
Externí odkaz:
http://arxiv.org/abs/2202.11793
Autor:
Seidler, Inga, Struck, Tom, Xue, Ran, Focke, Niels, Trellenkamp, Stefan, Bluhm, Hendrik, Schreiber, Lars R.
Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a natural choice
Externí odkaz:
http://arxiv.org/abs/2108.00879
Autor:
Kammerloher, Eugen, Schmidbauer, Andreas, Diebel, Laura, Seidler, Inga, Neul, Malte, Künne, Matthias, Ludwig, Arne, Ritzmann, Julian, Wieck, Andreas, Bougeard, Dominique, Schreiber, Lars R., Bluhm, Hendrik
Publikováno v:
Phys. Rev. Appl. 22, 024044 (2024)
A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor for local low-power signal amplification, i
Externí odkaz:
http://arxiv.org/abs/2107.13598
Autor:
Volmer, Frank, Seidler, Inga, Bisswanger, Timo, Tu, Jhih-Sian, Schreiber, Lars R., Stampfer, Christoph, Beschoten, Bernd
Publikováno v:
J. Phys. D: Appl. Phys. 54, 225304 (2021)
We discuss how the emission of electrons and ions during electron-beam-induced physical vapor deposition can cause problems in micro- and nanofabrication processes. After giving a short overview of different types of radiation emitted from an electro
Externí odkaz:
http://arxiv.org/abs/2010.06459
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Akademický článek
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