Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Sei Umisedo"'
Autor:
Kohei Tanaka, Sei Umisedo, Hideyasu Une, Sami K. Hahto, Yusuke Kuwata, Karuppanan Sekar, Yoshiki Nakashima, Masayoshi Hino, Hirofumi Asai, Thormas N. Horsky, Tetsuya Igo, Tetsuro Yamamoto, Nariaki Hamamoto
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
A new high current Ion implanter "LUXiON" has been developed. Superior high beam current and high beam controllability are achieved by a novel beam transportation system, which extracts a high current long ion beam from an ion source, then transports
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd6c6f47f310179b38b38a42ac4ae485
https://doi.org/10.1109/iit.2016.7882876
https://doi.org/10.1109/iit.2016.7882876
Autor:
Masayasu Tanjyo, Nobuo Nagai, Yuji Koga, Sei Umisedo, Tsutomu Nagayama, T. Matsumoto, Nariaki Hamamoto, Noriaki Maehara, John Borland, Hideyasu Une
Publikováno v:
ECS Transactions. 18:1059-1064
Newly developed sweep beam Cluster ion implanter: CLARIS with 0.2-7keV energy range for Boron beam and 1-10keV energy range for Carbon beam is introduced. Novel Cluster ion implantation technology is capable for 45nm beyond device requiring USJ forma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::893b5a5096a248e2bc6972d0690215ed
https://doi.org/10.1149/1.3096572
https://doi.org/10.1149/1.3096572
Autor:
Shigeki Sakai, Sei Umisedo, Yasuo Nara, Nobuo Nagai, Masayasu Tanjyo, Takayuki Aoyama, Tsutomu Nagayama, Nariaki Hamamoto
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:443-448
A decaborane implantation system has been developed. The maximum beam current achieved at a wafer is 30 μA at 5 keV with the divergence less than 0.4°, which corresponds to the equivalent 500 eV–300 μA boron monomer implantation without an energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a95bced3cbb92bf22686ede0f8111db3
https://doi.org/10.1016/j.nimb.2005.05.023
https://doi.org/10.1016/j.nimb.2005.05.023
Autor:
Shigeki Sakai, Seigo Kanemaru, Tsuyoshi Kojima, T. Ikejiri, Junzo Ishikawa, Sei Umisedo, Hiroshi Tsuji, Nobuo Nagai, Yasuhito Gotoh, Masayoshi Nagao, K. Nakamura
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:390-394
We propose use of silicon field emission array as a novel charge neutralization device for ion implanter. Fundamental characteristics of the emitted electrons, i.e. energy distribution and operation in high vacuum were investigated. As a result, ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc31ebed307df8aca0524c5d10cac0e4
https://doi.org/10.1016/j.nimb.2005.05.033
https://doi.org/10.1016/j.nimb.2005.05.033
Autor:
Junzo Ishikawa, Kouji Nakamura, Sei Umisedo, Toshihiko Kojima, Nobuo Nagai, Hiroshi Tsuji, Shigeki Sakai, Yasuhito Gotoh, Tadashi Ikejiri
Publikováno v:
Shinku. 48:329-332
We propose the application of silicon field emitter array (Si-FEA) to resolve the problem of wafer charging in the ion implantation process. This article reports experiments conducted to review the basic property of Si-FEA. This time, we measured the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f486cbafef13ea53fb7e0b7ef893fe9c
https://doi.org/10.3131/jvsj.48.329
https://doi.org/10.3131/jvsj.48.329
Publikováno v:
The Review of scientific instruments. 85(2)
Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::850af4b7db5097f2e3d3b80b0b90157b
https://pubmed.ncbi.nlm.nih.gov/24593650
https://pubmed.ncbi.nlm.nih.gov/24593650
Autor:
Yoshiki Nakashima, Yuji Koga, Hiroshi Onoda, Masahiro Hashimoto, Nariaki Hamamoto, Sei Umisedo, Tsutomu Nagayama
Publikováno v:
2012 12th International Workshop on Junction Technology.
Low temperature cluster carbon co-implantation was applied for phosphorous activation enhancement and transient enhanced diffusion (TED) suppression. The dependence of phosphorous activation and TED on 1) carbon energy, 2) dose and 3) substrate tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d22e0742d4a05f92acc240e8a5a19de
https://doi.org/10.1109/iwjt.2012.6212821
https://doi.org/10.1109/iwjt.2012.6212821
Autor:
Tsutomu Nagayama, Hiroshi Onoda, Nariaki Hamamoto, Sei Umisedo, Yasunori Kawamura, Yoshiki Nakashima, Yuji Koga, Masahiro Hashimoto
Publikováno v:
AIP Conference Proceedings.
Carbon co-implantation is well known as an effective method for suppressing boron/phosphorous transient enhanced diffusion (TED). Germanium pre-amorphization implantation (PAI) is usually applied prior to carbon co-implantation for suppressing channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c058bde522bcce9c207cf79ee8dcb633
https://doi.org/10.1063/1.4766501
https://doi.org/10.1063/1.4766501
Autor:
Sei Umisedo, Tsutomu Nagayama, Nariaki Hamamoto, Hiroshi Onoda, Masahiro Hashimoto, Yuji Koga, Yoshiki Nakashima, Yasunori Kawamura
Publikováno v:
AIP Conference Proceedings.
Amorphous Si layer formation with cluster carbon ion implantations at low substrate temperature and its effects on damage recovery and diffusion suppression have been discussed. Cluster carbon molecule species (C3Hx∼C7Hx), implantation temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb0d22fbc8e77b5e521832ea1015b404
https://doi.org/10.1063/1.4766540
https://doi.org/10.1063/1.4766540
Autor:
Jason Reyes, Kouhei Tanaka, Nariaki Hamamoto, Noriaki Maehara, Hiroshi Onoda, Yuji Koga, Yoshiki Nakashima, Shinichi Sezaki, Tsutomu Nagayama, S. Prussin, Yasunori Kawamura, Yoshikazu Hashino, Shigeki Sakai, Hideki Yoshimi, Masayasu Tanjyo, Masahiro Hashimoto, Sei Umisedo
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
Cluster C implantation at low temperature has been studied in terms of amorphous Si (a-Si) formation and elimination of B implanted induced end of range defects (EORDs). Thickness of a-Si can be controlled by C equivalent energy and dose. Monomer C n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b85e50c0dca161a0cb29088e1a7e99
https://doi.org/10.1109/rtp.2010.5623605
https://doi.org/10.1109/rtp.2010.5623605