Zobrazeno 1 - 10
of 262
pro vyhledávání: '"Sei Hyung Ryu"'
Publikováno v:
Materials Science Forum. 1090:93-100
Silicon carbide (SiC) metal-oxide semiconductor (MOS) power devices such as metal-oxide semiconductor field-effect transistors (MOSFETs) require a stable and low defect-density interface, and a high-quality dielectric, for good device performance and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d3fb81d1255ae790a965fc260fd5371
https://doi.org/10.4028/p-3w3s88
https://doi.org/10.4028/p-3w3s88
Autor:
Hemant Dixit, Daniel J. Lichtenwalner, Andreas Scholtze, Jae Hyung Park, Steven Rogers, Simon Bubel, Sei Hyung Ryu
Publikováno v:
Materials Science Forum. 1090:153-157
We present a calibrated bulk mobility model for 4H-SiC. Hall measurements are performed on 4H-SiC samples to determine the bulk mobility/resistivity in the temperature range of 200-500K. We observe that temperature dependence of bulk resistivity cann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e0e69b344ff675bbaeb7abac926b93e
https://doi.org/10.4028/p-1my2o8
https://doi.org/10.4028/p-1my2o8
Autor:
Daniel J. Lichtenwalner, Jae Hyung Park, Steven Rogers, Hemant Dixit, Andreas Scholtze, Simon Bubel, Sei Hyung Ryu
Publikováno v:
Materials Science Forum. 1089:3-7
High-quality, low resistivity n-type (nitrogen-doped) single crystal 4H-SiC wafers are needed to grow high-quality epitaxial SiC layers used for the active blocking layers of high-voltage power devices. The resistance of the substrate constitutes a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b77e2f642cbcb54f580eec7b2556e64
https://doi.org/10.4028/p-w8i0hf
https://doi.org/10.4028/p-w8i0hf
Autor:
Philipp Steinmann, Satyaki Ganguly, Brett Hull, Khiem Lam, Daniel J. Lichtenwalner, Jae-Hyung Park, Rahul Potera, Jim Richmond, Sei-Hyung Ryu, Shadi Sabri, Charles Van Brackle, Edward Van Brunt, Elizabeth Williams
Publikováno v:
IEEE Transactions on Electron Devices. 69:3848-3853
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::015ba1168792b61e59ed48a243d98dea
https://doi.org/10.1109/ted.2022.3174516
https://doi.org/10.1109/ted.2022.3174516
Autor:
Daniel J. Lichtenwalner, Donald A. Gajewski, Sei Hyung Ryu, Brett Hull, Scott Allen, John W. Palmour
Publikováno v:
Materials Science Forum. 1062:463-467
Power devices are susceptible to failure by terrestrial neutron single-event burnout (SEB) while in the high-voltage blocking state and above a VDS threshold for that device. Typically, the SEB failure rate is measured at a high blocking voltage, wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eafdf4030976843c2a8ad3fb1536a21
https://doi.org/10.4028/p-4b1mb3
https://doi.org/10.4028/p-4b1mb3
Autor:
Konstantinos Zekentes, Victor Veliadis, Sei-Hyung Ryu, Konstantin Vasilevskiy, Spyridon Pavlidis, Arash Salemi, Yuhao Zhang
Publikováno v:
More-than-Moore Devices and Integration for Semiconductors ISBN: 9783031216091
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94211598bf9d3dc65bf536b0d4664974
https://doi.org/10.1007/978-3-031-21610-7_2
https://doi.org/10.1007/978-3-031-21610-7_2
Autor:
Sei Hyung Ryu, Scott Allen, Edward Van Brunt, John W. Palmour, Jae Hyung Park, Daniel J. Lichtenwalner, Donald A. Gajewski, Shadi Sabri, Philipp Steinmann, Brett Hull, Satyaki Ganguly, Amy Romero, Jim Richmond
Publikováno v:
Materials Science Forum. 1004:992-997
Power metal-oxide-semiconductor field-effect transistors (MOSFETs) experience conditions of high field during normal operation. During switching conditions, unexpected transient events may occur which force devices into avalanche or short circuit con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b5d2be04e73ae0418c42840d57c2ed4
https://doi.org/10.4028/www.scientific.net/msf.1004.992
https://doi.org/10.4028/www.scientific.net/msf.1004.992
Autor:
Satyaki Ganguly, Daniel J. Lichtenwalner, Caleb Isaacson, Donald A. Gajewski, Philipp Steinmann, Ryan Foarde, Brett Hull, Sei-Hyung Ryu, Scott Allen, John W. Palmour
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3b58000652f3d5a3c79b9061dc46821
https://doi.org/10.1109/irps48227.2022.9764608
https://doi.org/10.1109/irps48227.2022.9764608
Publikováno v:
2021 IEEE Pulsed Power Conference (PPC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bceed5c9ee32358d823fd074a00dab1
https://doi.org/10.1109/ppc40517.2021.9733055
https://doi.org/10.1109/ppc40517.2021.9733055
Publikováno v:
2021 IEEE Pulsed Power Conference (PPC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09c8ad3738a2c17e028aa1f4ecdab45a
https://doi.org/10.1109/ppc40517.2021.9733054
https://doi.org/10.1109/ppc40517.2021.9733054