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Autor:
Jeongil Bang, Eun Cheol Do, Haeryong Kim, Hyungjun Kim, Bo‐Eun Park, Byunghoon Na, Jooho Lee, Sehyuck Park, Ho Won Jang, Jaeho Lee
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024)
Abstract Perovskite‐oxide‐based capacitors, which exhibit high charge storage capacity, have attracted considerable attention as a potential candidate for overcoming the limitations of nanoscale integration. Unfortunately, a dead layer forms in t
Externí odkaz:
https://doaj.org/article/7c0a63ea3d7d449dbbdd55f026bd0e73