Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Sehwan Park"'
Autor:
Soo Ho Choi, Sang-Hyeok Yang, Sehwan Park, Byeong Wook Cho, Tuan Dung Nguyen, Jung Ho Kim, Young-Min Kim, Ki Kang Kim, Young Hee Lee
Publikováno v:
APL Materials, Vol 11, Iss 11, Pp 111124-111124-8 (2023)
Chemical vapor deposition (CVD) can produce wafer-scale transition-metal dichalcogenide (TMD) monolayers for the integration of electronic and optoelectronic devices. Nonetheless, the material quality of the CVD-grown TMDs still remains controversial
Externí odkaz:
https://doaj.org/article/21aff16e97294e0ea6c7e8ec536012cc
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-9 (2022)
Abstract Two-dimensional (2D) molybdenum disulfide (MoS2) has been recognized as a potential substitution of platinum (Pt) for electrochemical hydrogen evolution reaction (HER). However, the broad adoption of MoS2 is hindered by its limited number of
Externí odkaz:
https://doaj.org/article/eba4e7151deb4e1e9c9139f892facd35
Publikováno v:
PLoS ONE, Vol 17, Iss 3, p e0264078 (2022)
The earth anchor method is used to prevent landslides, and repair and reinforce cut or steep slopes due to its benefits of ease of construction and economic feasibility. However, the loss of anchor force has become a problem, which may cause failure
Externí odkaz:
https://doaj.org/article/d465dc1e9d494a06baa7348af96dad96
Autor:
Sang‐Hyeok Yang, Wooseon Choi, Byeong Wook Cho, Frederick Osei‐Tutu Agyapong‐Fordjour, Sehwan Park, Seok Joon Yun, Hyung‐Jin Kim, Young‐Kyu Han, Young Hee Lee, Ki Kang Kim, Young‐Min Kim
Publikováno v:
Advanced Science, Vol 8, Iss 16, Pp n/a-n/a (2021)
Abstract Atomic dopants and defects play a crucial role in creating new functionalities in 2D transition metal dichalcogenides (2D TMDs). Therefore, atomic‐scale identification and their quantification warrant precise engineering that widens their
Externí odkaz:
https://doaj.org/article/6003e2c1bc4b4a29918a9debd16cdd7e
Autor:
Sehwan Park, Junkyeong Kim
Publikováno v:
Water, Vol 14, Iss 14, p 2167 (2022)
Currently, membrane filters, which need to be replaced regularly as they get worn, are used in filtration facilities globally. The old membrane filters and housings become continuous industrial waste and are currently 100% incinerated. To solve this
Externí odkaz:
https://doaj.org/article/1ab673df78ca463990ad59e54b893622
Publikováno v:
Sensors, Vol 22, Iss 10, p 3955 (2022)
At construction sites, temporary facilities have caused continuous collapse accidents, causing damage to human life. If the concrete placing height is high and the worker is pushed into one place at the time of placing, the working load may be exceed
Externí odkaz:
https://doaj.org/article/fca65a9c067a48b18fed9c84623e83d7
Autor:
Hojoon Yi, Jaeuk Bahng, Sehwan Park, Dang Xuan Dang, Wonkil Sakong, Seungsu Kang, Byung-wook Ahn, Jungwon Kim, Ki Kang Kim, Jong Tae Lim, Seong Chu Lim
Publikováno v:
Materials, Vol 14, Iss 16, p 4477 (2021)
The 1D wire TaS3 exhibits metallic behavior at room temperature but changes into a semiconductor below the Peierls transition temperature (Tp), near 210 K. Using the 3ω method, we measured the thermal conductivity κ of TaS3 as a function of tempera
Externí odkaz:
https://doaj.org/article/29b2bb63c36c43c5b20f25da05a26a58
Publikováno v:
Remote Sensing, Vol 13, Iss 10, p 2011 (2021)
As the frequency of earthquakes has increased in Korea in recent years, designing earthquake-resistant facilities has been increasingly emphasized. Structures constructed with rebars are vulnerable to shaking, which reduces their seismic performance
Externí odkaz:
https://doaj.org/article/12cb3fcf0f434ce280a6afbbf98b75b4
Autor:
Hyun Seok Lee, Seok Joon Yun, Changwon Seo, Gang Hee Han, Sehwan Park, Jubok Lee, Jeongyong Kim, Jung Ho Kim, Young Hee Lee
Publikováno v:
Current Applied Physics. 33:59-65
Transition metal dichalcogenide (TMD) monolayers, such as MoS2, possess a direct optical bandgap and are useful for emerging ultrathin optoelectronics in the visible light range, whereas their thickness limits light absorption and emission properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b10c8fd53d75ecb1941870194ec9d748
https://doi.org/10.1016/j.cap.2021.11.002
https://doi.org/10.1016/j.cap.2021.11.002
Autor:
Sehwan Park, S.H. Woo, H.W. Kim, Dongchul Sung, Byoung-Nam Kim, Eung-Kwon Kim, J.R. Ahn, I.B. Khadk, Geun Young Yeom, J. Son, D.-H. Lee, Jihoon Park
Publikováno v:
Current Applied Physics. 20:1435-1440
Freestanding graphene on a trench has been fabricated extensively using a transfer process of chemical vapor deposition grown graphene. Here, we demonstrate that freestanding graphene can be grown directly on a trench without a transfer process. A sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b35ab321afdbbdf4059214c8e49bfb0
https://doi.org/10.1016/j.cap.2020.09.010
https://doi.org/10.1016/j.cap.2020.09.010