Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Sehee Lim"'
Publikováno v:
IEEE Access, Vol 9, Pp 35549-35561 (2021)
Recently, nonvolatile systems with nonvolatile flip-flops (NVFFs) have gained prominence for their energy efficiency in energy-harvesting devices and battery-operated Internet of Things applications. They are normally-off instantly-on, and thus, can
Externí odkaz:
https://doaj.org/article/a009250ee05945c6b122a925e53b0698
Publikováno v:
IEEE Access, Vol 9, Pp 127895-127905 (2021)
The ferroelectric field-effect transistor (FeFET) is one of the most promising candidates for emerging nonvolatile memory devices owing to its low write energy and high $I_{\mathrm {ON}}/I_{\mathrm {OFF}}$ ratio. For FeFET applications as nonvolatile
Externí odkaz:
https://doaj.org/article/76cfe149f43b4ce5a678498f27d22904
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 70:806-818
Autor:
Sehee Lim, Youngin Goh, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Yeongseok Jeong, Hunbeom Shin, Sanghun Jeon, Seong-Ook Jung
Publikováno v:
IEEE Journal of Solid-State Circuits. :1-11
Autor:
Giuk Kim, Dong Han Ko, Taeho Kim, Sangho Lee, Minhyun Jung, Young Kyu Lee, Sehee Lim, Minyoung Jo, Taehyong Eom, Hunbeom Shin, Yeongseok Jeong, Seongook Jung, Sanghun Jeon
Publikováno v:
ACS Applied Materials & Interfaces. 15:1463-1474
Ferroelectric field-effect transistors (FeFETs) have attracted enormous attention for low-power and high-density nonvolatile memory devices in processing-in-memory (PIM). However, their small memory window (MW) and limited endurance severely degrade
Publikováno v:
IEEE Electron Device Letters. 43:1049-1052
A Highly Integrated Crosspoint Array Using Self-rectifying FTJ for Dual-mode Operations: CAM and PUF
Autor:
Sehee Lim, Youngin Goh, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Minki Kim, Yeongseok Jeong, Hunbeom Shin, Sanghun Jeon, Seong-Ook Jung
Publikováno v:
ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC).
Publikováno v:
IEEE Access, Vol 9, Pp 127895-127905 (2021)
The ferroelectric field-effect transistor (FeFET) is one of the most promising candidates for emerging nonvolatile memory devices owing to its low write energy and high $I_{\mathrm {ON}}/I_{\mathrm {OFF}}$ ratio. For FeFET applications as nonvolatile
Publikováno v:
IEEE Access, Vol 9, Pp 35549-35561 (2021)
Recently, nonvolatile systems with nonvolatile flip-flops (NVFFs) have gained prominence for their energy efficiency in energy-harvesting devices and battery-operated Internet of Things applications. They are normally-off instantly-on, and thus, can
Publikováno v:
IEEE Transactions on Information Forensics and Security. 16:2843-2853
Recently, with the increase in popularity of Internet of Things (IoT) devices, cryptographic protection techniques have become necessary for high-security applications. In general, IoT devices have strict power and area constraints. Thus, use of a ph