Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Seh-Jin Park"'
Autor:
David P. Norton, Seh-Jin Park
Publikováno v:
Thin Solid Films. 510:143-147
Ion-beam assisted deposition of polycrystalline Y 2 O 3 films using e-beam evaporation was investigated. For growth on non-crystalline substrates, low temperature growth yields randomly oriented polycrystalline material. At elevated temperature, surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f6e7ac1555382ead36c4e2019d72e5d
https://doi.org/10.1016/j.tsf.2005.12.305
https://doi.org/10.1016/j.tsf.2005.12.305
Autor:
Naoya Hayashi, Hiroyoshi Tanabe, Seh-Jin Park, Eric M. Gullikson, Tetsunori Murachi, Tsukasa Abe
Publikováno v:
SPIE Proceedings.
We directly extracted the phase-shift values of an EUV mask by measuring the reflectance of the mask. The mask had gradient absorber thickness along vertical direction. We measured the reflectance of the open multilayer areas and the absorber areas b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c70a30c0f93fcc95ad7d82449162f60
https://doi.org/10.1117/12.2031135
https://doi.org/10.1117/12.2031135
Autor:
Eric M. Gullikson, Ogase Taichi, Seh-Jin Park, Hiroyoshi Tanabe, Tetsunori Murachi, Tsukasa Abe, Naoya Hayashi
Publikováno v:
SPIE Proceedings.
The measurement and extraction method of phase-shift values for thin and thick absorber Extreme Ultra-Violet (EUV) masks has been studied by both of experiments and simulations. We fabricated 4 EUV masks with different absorber thicknesses. We first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9562571418b6accfc4993f0421f304f
https://doi.org/10.1117/12.976817
https://doi.org/10.1117/12.976817
Autor:
Seh-Jin Park, Guojing Zhang, Ogase Taichi, Manish Chandhok, Sang H. Lee, Naoya Hayashi, Hiroyoshi Tanabe, Tsukasa Abe, Tetsunori Murachi
Publikováno v:
SPIE Proceedings.
Phase-shifting effect of EUV masks with various absorber thicknesses has been studied both by simulations and experiments. In EUV lithography, masks with 180 phase shifting absorber work like embedded attenuated phase-shifting masks. At 66nm thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d824dbd14b4a6f5658f59a3eb81984e
https://doi.org/10.1117/12.895149
https://doi.org/10.1117/12.895149
Autor:
Tomoya Tamura, Seh-Jin Park, Guojing Zhang, Yuta Sato, Kazunori Omata, Hal Kusunose, Andy Ma, Ted Liang
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) is a leading technology to succeed optical lithography for high volume production of 22 nm node and beyond. One of the top risks for EUVL is the readiness of defect-free masks, especially the availability of Mo/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d330c7053d011448a51c4e32268c36f7
https://doi.org/10.1117/12.824259
https://doi.org/10.1117/12.824259
Autor:
Sanjay Goyal, Michael L. Leeson, Manish Chandhok, Jan Hermans, Steven L. Carson, Marilyn Kamna, Seh-Jin Park, Guojing Zhang, Tod A. Laursen, Alan Myers, Alan R. Stivers, Sanjay Govindjee, Gian Lorusso, Gerd Brandstetter, Eric Hendrickx, Fabian C. Martinez
Publikováno v:
Alternative Lithographic Technologies.
EUV blank non-flatness results in both out of plane distortion (OPD) and in-plane distortion (IPD) [3-5]. Even for extremely flat masks (~50 nm peak to valley (PV)), the overlay error is estimated to be greater than the allocation in the overlay budg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::047f392a3a1419ed816bce5f4cda69ec
https://doi.org/10.1117/12.814428
https://doi.org/10.1117/12.814428
Autor:
Nathan Wilcox, Chuan Hu, Seh-Jin Park, Guojing Zhang, Marilyn Kamna, Kamgmin Hsia, Fabian C. Martinez, Chandhok Manish, Alan R. Stivers
Publikováno v:
Photomask Technology 2008.
Extreme Ultraviolet Lithography (EUVL) masks have residual stress induced by several thin films on low thermal expansion material (LTEM) substrates. The stressed thin films finally result in convex out-of-plane displacement (OPD) of several 100s of n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::938b1c8ff3369af7d62b872118fb9423
https://doi.org/10.1117/12.801542
https://doi.org/10.1117/12.801542
Autor:
Pei-yang Yan, Barry Lieberman, Ted Liang, Emily Y. Shu, Seh-Jin Park, Guojing Zhang, Ping Qu, Alan R. Stivers, Gilroy Vandentop, Sven Henrichs, Erdem Ultanir, Peter Sanchez
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) tool development achieved a big milestone last year as two full-field Alpha Demo Tools (ADT) were shipped to customers by ASML. In the future horizon, a full field "EUV1" exposure tool from Nikon will be availab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24a465211f12bfefb302d0bae38c4db
https://doi.org/10.1117/12.728941
https://doi.org/10.1117/12.728941
Autor:
Seh-Jin Park, Guojing Zhang, Alan Myers, Gilroy Vandentop, Alan R. Stivers, Ted Liang, Patrick P. Naulleau
Publikováno v:
SPIE Proceedings.
Mask defect specifications not only are needed to ensure quality masks for acceptable resist patterning on wafers, but also are utilized as a common goal for tool development, noticeably for mask inspection and repair. Defect specifications are gener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a4b7919a42a8035fc2c34b90106e6ed
https://doi.org/10.1117/12.681844
https://doi.org/10.1117/12.681844
Autor:
Chang Ju Choi, Emily Y. Shu, Seh-Jin Park, Eric J. Lanzendorf, Guojing Zhang, Alan R. Stivers, Gilroy Vandentop, Kangmin Hsia, Peter Sanchez, Jeff Farnsworth, Manish Chandhok, Pei-yang Yan, Michael J. Leeson, Yan Du, Ted Liang
Publikováno v:
SPIE Proceedings.
It becomes increasingly important to have an integrated process for Extreme UltraViolet (EUV) mask fabrication in order to meet all the requirements for the 32 nm technology node and beyond. Intel Corporation established the EUV mask pilot line by in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6ce9eec27d37275143d35d5e2bc55ef
https://doi.org/10.1117/12.681839
https://doi.org/10.1117/12.681839