Impact of source/drain and bulk engineering on LFN performance of n- and p-MOSFET

Autor: Ioannidis, E.G., Rohracher, K., Roger, F., Pflanzl, W.C., Leisenberger, F.P., Wachmann, E., Seebacher, E., Vescoli, V.

Publikováno v: In Solid State Electronics September 2017 135:1-7

An analytical approach for physical modeling of hot-carrier induced degradation

Autor: Tyaginov, S., Starkov, I., Enichlmair, H., Jungemann, Ch., Park, J.M., Seebacher, E., Orio, R., Ceric, H., Grasser, T.

Publikováno v: In Microelectronics Reliability September-November 2011 51(9-11):1525-1529

Simulation and measurement of interconnects and on-chip passives : gauge fields and ghosts as numerical tools

Autor: Schoenmaker, W., Meuris, P., Janssens, E., Verschaeve, M., Seebacher, E., Pflanzl, W., Stucchi, M., Mandeep, B., Maex, K., Schilders, W.H.A., Di Bucchianico, A., Mattheij, R.M.M., Peletier, M.A.

Publikováno v: Progress in Industrial Mathematics at ECMI 2004 (Proceedings 13th European Conference on Mathematics for Industry, Eindhoven, The Netherlands, June 21-25, 2004), 57-73
STARTPAGE=57;ENDPAGE=73;TITLE=Progress in Industrial Mathematics at ECMI 2004 (Proceedings 13th European Conference on Mathematics for Industry, Eindhoven, The Netherlands, June 21-25, 2004)
Progress in Industrial Mathematics at ECMI 2004 ISBN: 9783540280729

This paper describes the present status of using lattice gauge and ghost field methods for the simulation of on-chip interconnects and integrated passive components at low and high frequencies. Test structures have been developed and characterized in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e46fa6f6f3f4015a5ca1ea4c5654e5f5
https://doi.org/10.1007/3-540-28073-1_6

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Coupling study in smart power mixed ICs with a dedicated on-chip sensor.

Autor: Tomasevic, V., Boyer, A., Bendhia, S., Steinmair, A., Weiss, B., Seebacher, E., Rust, P.

Publikováno v: 2015 IEEE International Symposium on Electromagnetic Compatibility (EMC); 2015, p628-633, 6p