Zobrazeno 1 - 10
of 248
pro vyhledávání: '"See, A. M."'
Quantum dots exhibit reproducible conductance fluctuations at low temperatures due to electron quantum interference. The sensitivity of these fluctuations to the underlying disorder potential has only recently been fully realized. We exploit this sen
Externí odkaz:
http://arxiv.org/abs/1408.4845
Autor:
MacLeod, S. J., See, A. M., Keane, Z. K., Scriven, P., Micolich, A. P., Aagesen, M., Lindelof, P. E., Hamilton, A. R.
Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena due to their charge stability and robust electronic prop
Externí odkaz:
http://arxiv.org/abs/1312.5410
Autor:
Carrad, D. J., Burke, A. M., Klochan, O., See, A. M., Hamilton, A. R., Rai, A., Reuter, D., Wieck, A. D., Micolich, A. P.
We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have shown that the
Externí odkaz:
http://arxiv.org/abs/1312.1754
We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential c
Externí odkaz:
http://arxiv.org/abs/1310.4889
Autor:
Micolich, A. P., See, A. M., Scannell, B. C., Marlow, C. A., Martin, T. P., Pilgrim, I., Hamilton, A. R., Linke, H., Taylor, R. P.
Semiconductor billiards are often considered as ideal systems for studying dynamical chaos in the quantum mechanical limit. In the traditional picture, once the electron's mean free path, as determined by the mobility, becomes larger than the device,
Externí odkaz:
http://arxiv.org/abs/1204.4882
Autor:
See, A. M., Pilgrim, I., Scannell, B. C., Montgomery, R. D., Klochan, O., Burke, A. M., Aagesen, M., Lindelof, P. E., Farrer, I., Ritchie, D. A., Taylor, R. P., Hamilton, A. R., Micolich, A. P.
Publikováno v:
Physical Review Letters 108, 196807 (2012)
Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantu
Externí odkaz:
http://arxiv.org/abs/1204.0158
Autor:
See, Andrew M., Klochan, Oleh, Micolich, Adam P., Hamilton, Alex R., Aagesen, Martin., Lindelof, Poul Erik
We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation doping. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and minimal drift i
Externí odkaz:
http://arxiv.org/abs/1106.5847
Autor:
Scannell, B. C., Pilgrim, I., See, A. M., Montgomery, R. D., Morse, P. K., Fairbanks, M. S., Marlow, C. A., Linke, H., Farrer, I., Ritchie, D. A., Hamilton, A. R., Micolich, A. P., Eaves, L., Taylor, R. P.
The study of electron motion in semiconductor billiards has elucidated our understanding of quantum interference and quantum chaos. The central assumption is that ionized donors generate only minor perturbations to the electron trajectories, which ar
Externí odkaz:
http://arxiv.org/abs/1106.5823
We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation doping, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade peak lineshap
Externí odkaz:
http://arxiv.org/abs/1003.0240
Autor:
Hibbeler, Lance C., Chin See, Melody M., Iwasaki, Junya, Swartz, Kenneth E., O’Malley, Ronald J., Thomas, Brian G.
Publikováno v:
In Applied Mathematical Modelling October 2016 40(19-20):8530-8551