Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategy

Autor: Alberto Castellazzi, Asad Fayyaz, Frédéric Richardeau, Sebastien Vinnac, François Boige

Publikováno v: European Power Elecrtonics and Applications 2019-IEEE ECCE Europe
European Power Elecrtonics and Applications 2019-IEEE ECCE Europe, Sep 2019, Gênes, Italy

International audience; Silicon carbide (SiC) power MOSFETs exhibit some key differences compared with Silicon (Si) MOSFETs and IGBTs. In particular, both their intrinsic (i.e., material technology related) and extrinsic (i.e., device generation rela

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47bb5ca8cb3f48c7fbcf4d3c13b08e06
https://hal.archives-ouvertes.fr/hal-02334405/document