Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sebastien Gaillard"'
Publikováno v:
Emerging Drugs in Sport ISBN: 9783030792923
Emerging Drugs in Sport
Emerging Drugs in Sport
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff2ed8284022c5d9dbd720b7f27b6d2e
https://doi.org/10.1007/978-3-030-79293-0_9
https://doi.org/10.1007/978-3-030-79293-0_9
Autor:
Olivier Marty, C. Merckling, Yves Robach, B. Chenevier, Sebastien Gaillard, Guillaume Saint-Girons, G. Delhaye, Y. Rozier, M. El-Kazzi, Michel Gendry, L. Rapenne, G. Hollinger
Publikováno v:
Microelectronics Reliability. 47:540-543
In this work, the potentiality of molecular beam epitaxy techniques to prepare epitaxial lanthanum aluminate (LaAlO 3 ) films on Si(0 0 1) is explored. We first demonstrate that the direct growth of LaAlO 3 on Si(0 0 1) is impossible : amorphous laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3224e4757567da300e8d3eee18f19f59
https://doi.org/10.1016/j.microrel.2007.01.036
https://doi.org/10.1016/j.microrel.2007.01.036
Autor:
Gregoire Ducotey, Olivier Robin, Sebastien Gaillard, Damien Jeanjean, Rurh Sramek, Yufei Chen, Brian J. Brown, Frederic Pitard, Laurent Nicoud, Sébastien Mermoz
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
A high yield copper damascene process requires defect-free copper surfaces after Cu CMP. In this paper we present a novel technique to improve cleaning efficiency, especially the removal of particles in the range of 20 to 80nm. This innovative Chemic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e44b23096511b2a262c3620ab4db31e4
https://doi.org/10.1109/asmc.2015.7164440
https://doi.org/10.1109/asmc.2015.7164440
Autor:
Maurice Rivoire, Catherine Euvrard, Aurelien Seignard, Emmanuel Gourvest, Sebastien Gaillard, V. Balan
Publikováno v:
Proceedings of International Conference on Planarization/CMP Technology 2014.
Beyond C14nm, better W CMP performances are required due to new CMOS integration constraints such as contact density increase, wide W feature introduction or low oxide loss for any polishing steps related to gate building. In order to address these n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::780fb41f80f0d4b6dafb6e10dae7f3e8
https://doi.org/10.1109/icpt.2014.7017237
https://doi.org/10.1109/icpt.2014.7017237