Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sebastien Chartier"'
Publikováno v:
ECS Transactions. 111:117-122
This work covers integration of advanced III-V semiconductors on silicon substrate for RF-sensor integration up to very high frequencies of 300 GHz and 670 GHz, respectively, including improved active device performance through intelligent engineerin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce2e0d9ce6ea40f007e4a7e2f2c0d148
https://doi.org/10.1149/11101.0117ecst
https://doi.org/10.1149/11101.0117ecst
Publikováno v:
2021 16th European Microwave Integrated Circuits Conference (EuMIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d8a6adab900d4727a5ee6a197aacf84
https://doi.org/10.23919/eumic50153.2022.9783669
https://doi.org/10.23919/eumic50153.2022.9783669
Publikováno v:
2021 16th European Microwave Integrated Circuits Conference (EuMIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08c9ae4ea69af56c04b5be12752c9d2b
https://doi.org/10.23919/eumic50153.2022.9783623
https://doi.org/10.23919/eumic50153.2022.9783623
Autor:
Laurenz John, Axel Tessmann, Arnulf Leuther, Thomas Merkle, Hermann Massler, Sebastien Chartier
In this letter, we report on the development of highgain WR-1.5 amplifier circuits, utilizing a transferred-substrate InGaAs-on-insulator (InGaAs-OI) high-electron-mobility transistor (HEMT) technology on Si with 20-nm gate length. A six-stage and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8b1dc907717dfee67ae2581156754d6
https://doi.org/10.24406/h-418611
https://doi.org/10.24406/h-418611
Publikováno v:
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC).
A Ka-band power amplifier (PA) in a differential cascode topology with active biasing is designed, implemented in a 0.25 μm SiGe BiCMOS technology, and characterized. The design presents low power consumption and high Power Added Efficiency (PAE). T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34667278943fa8cd69e3ca98164ea5e4
https://doi.org/10.1109/inmmic.2017.7927315
https://doi.org/10.1109/inmmic.2017.7927315
Autor:
Axel Tessmann, Oliver Ambacher, Sebastien Chartier, Helmut Essen, Michael Schlechtweg, Rainer Weber, Stephan Stanko, Arnulf Leuther, Ingmar Kallfass
Publikováno v:
physica status solidi c. 6:1390-1393
The development of advanced millimeter-wave monolithic integrated circuits for application in active and passive high-resolution imaging systems operating beyond 200 GHz is presented. A wideband 210 GHz Low Noise Amplifier has been successfully reali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce916bf43b4441d1e87bc6ce6cd3f564
https://doi.org/10.1002/pssc.200881536
https://doi.org/10.1002/pssc.200881536
Autor:
S. Lenz, S. Turk, Ingmar Kallfass, Michael Schlechtweg, F. Schafer, Matthias Seelmann-Eggebert, I. Lopez-Fernandez, K. F. Schuster, Beatriz Aja, Hermann Massler, Sebastien Chartier, Arnulf Leuther, Juan Daniel Gallego, Carmen Diez
Publikováno v:
IEEE Microwave and Wireless Components Letters. 21:613-615
Two broadband very low-noise amplifiers operating in the frequency range from 4 to 12 GHz at cryogenic temperature are presented. The amplifier circuits have been developed using a 100 nm gate length InAlAs/InGaAs metamorphic high electron mobility t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbb71fbb50c8a377ed2463f688abae96
https://doi.org/10.1109/lmwc.2011.2167502
https://doi.org/10.1109/lmwc.2011.2167502
Publikováno v:
2014 44th European Microwave Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d92699439ad9c22809a213bb57d3c191
https://doi.org/10.1109/eumc.2014.6986391
https://doi.org/10.1109/eumc.2014.6986391
Autor:
Matthias Seelmann-Eggebert, Michael Schlechtweg, Oliver Ambacher, R. Losch, R. E. Makon, Rachid Driad, Fouad Benkhelifa, Volker Hurm, Ingmar Kallfass, Hermann Massler, J. Rosenzweig, Arnulf Leuther, M. Riessle, M. Zink, Axel Tessmann, M. Kuri, Sebastien Chartier, Rainer Weber
During the last years, the Fraunhofer IAF developed a variety of state-of-the-art millimeter-wave monolithic integrated circuits (MMICs) and modules for application in active and passive high-resolution imaging systems operating beyond 200 GHz as wel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fed2d15efee97ebf92af32ec6242068c
https://publica.fraunhofer.de/handle/publica/219179
https://publica.fraunhofer.de/handle/publica/219179