Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Sebastian Złotnik"'
Autor:
Sebastian Złotnik, Jarosław Wróbel, Jacek Boguski, Małgorzata Nyga, Marek Andrzej Kojdecki, Jerzy Wróbel
Publikováno v:
Sensors, Vol 21, Iss 16, p 5272 (2021)
Narrow band-gap semiconductors, namely ternary InAsSb alloys, find substantial technological importance for mid-infrared application as photodetectors in medical diagnostics or environmental monitoring. Thus, it is crucial to develop electrical conta
Externí odkaz:
https://doaj.org/article/5303e5ad1395423c8278ac83154e7eb7
Autor:
Ewelina B. Możdżyńska, Paweł Kamiński, Roman Kozłowski, Krzysztof P. Korona, Sebastian Złotnik, Elżbieta Jezierska, Jacek M. Baranowski
Publikováno v:
Journal of Materials Science. 57:17347-17362
Autor:
Can Lu, Jianhong Chen, Karolina Piętak, Anna Rokicińska, Piotr Kuśtrowski, Richard Dronskowski, Jiayin Yuan, Serhiy Budnyk, Sebastian Złotnik, Robert H. Coridan, Adam Slabon
Publikováno v:
Chemistry of Materials. 34:6902-6911
Autor:
Ewelina B. Możdżyńska, Sebastian Złotnik, Paweł Ciepielewski, Jarosław Gaca, Marek Wójcik, Paweł P. Michałowski, Krzysztof Rosiński, Karolina Piętak, Mariusz Rudziński, Elżbieta Jezierska, Jacek M. Baranowski
Publikováno v:
Journal of Materials Science. 57:7265-7275
Autor:
Sebastian Złotnik, Alessandro Pianelli, Jacek Boguski, Marek A. Kojdecki, Paweł Moszczyński, Janusz Parka, Jarosław Wróbel
Accurate determination of electronic transport properties of individual transparent conductive oxide layers, namely indium tin oxide (ITO), is essential for further development and design of photonic devices with ITO layer as a tunable ultrafast opto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::366aaa58d476e910af959121163e2891
https://trepo.tuni.fi/handle/10024/141704
https://trepo.tuni.fi/handle/10024/141704
Autor:
Sebastian Złotnik, M. Rudziński, Marek Wojcik, Łukasz Janicki, Jaroslaw Gaca, Robert Kudrawiec
Publikováno v:
Journal of Materials Science. 56:558-569
Abstract A novel catalyst-free and maskless growth approach is presented to form an ordered geometrical array of three-dimensional (3D) AlGaN/AlN microrods. The growth method is composed of a single growth step using metalorganic vapor phase epitaxy,
Autor:
Sebastian Złotnik, Jaroslaw Gaca, Karolina Piętak, Paweł Piotr Michałowski, Ewelina Rozbiegała, Marek Wojcik, Mariusz Rudziński
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:17892-17902
Phosphorus introduction into Mg-doped aluminium gallium nitride ((Al)GaN) epilayers to enhance the acceptor activation is a possible strategy for a p-type conductivity improvement in III-nitride wide-bandgap semiconductors. To date, P-implanted Mg-do
Autor:
Łukasz Janicki, Ryszard Korbutowicz, Mariusz Rudziński, Paweł Piotr Michałowski, Sebastian Złotnik, Miłosz Grodzicki, Sandeep Gorantla, Jarosław Serafińczuk, Detlef Hommel, Robert Kudrawiec
Publikováno v:
Applied Surface Science. 598:153872
Autor:
Sebastian Złotnik, Jakub Sitek, Jaroslaw Gaca, Paweł Piotr Michałowski, Krzysztof Rosiński, Mariusz Rudziński, Marek Wojcik
Publikováno v:
Applied Surface Science. 488:688-695
III-nitride materials, such as ternary alloys of gallium nitride (GaN) and aluminum nitride (AlN), are the prominent semiconductor systems in research and industry due to their importance for optoelectronic applications using ultraviolet (UV) spectra
Autor:
Karolina Piętak, Aleksandra Przewłoka, Wawrzyniec Kaszub, Aleksandra Krajewska, J. Binder, Maria Kaminska, Jakub Kierdaszuk, Ewelina Rozbiegała, Sebastian Złotnik, Andrzej Wysmołek, Aneta Drabińska
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An observed Ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::909264043dfeee768650641130df485c