Výsledky vyhledávání - "Sebastian Roensch"

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

Autor: Michael Krieger, Heiko B. Weber, Sebastian Roensch, Stefan Hertel, Sergey A. Reshanov, Adolf Schöner

Publikováno v: Materials Science Forum. :436-439

The electrically active deep levels in a graphene / silicon carbide field effect transistor (FET) were investigated by drain-current deep level transient spectroscopy (ID-DLTS). An evaluation procedure for ID-DLTS is developed in order to obtain the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::833e27b5325c5948ce10f89358d7654f
https://doi.org/10.4028/www.scientific.net/msf.778-780.436

Zobrazit plný text záznamu

Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon

Autor: Victor Sizov, Michael Krieger, Markus Sickmoeller, Lars Groh, Takuma Yagi, Stephan Lutgen, Saad Murad, Heiko B. Weber, Sebastian Roensch

Publikováno v: Materials Science Forum. :1180-1184

We present temperature dependent magnetoresistance measurements on the 2-dimensional electron gas of epitaxially grown AlGaN/GaN heterojunctions on silicon (Si). We report on the quantum correction to the classical conductance. In particular we found

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b260784c47cdca55e7b0db634d40c34c
https://doi.org/10.4028/www.scientific.net/msf.778-780.1180

Zobrazit plný text záznamu

Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon

Autor: Victor Sizov, Stephan Lutgen, Michael Krieger, Lars Groh, Heiko B. Weber, Saad Murad, Takuma Yagi, Sebastian Roensch

Publikováno v: Materials Science Forum. :502-505

The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was investigated in a range of 30 K - 340 K. The AlN spacer has a strong impact on the mobility at temperatures bel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c85a7e09fdd9e8e056af0822eb587ecb
https://doi.org/10.4028/www.scientific.net/msf.740-742.502

Zobrazit plný text záznamu

Subcell I-V characteristic analysis of GaInP/GaInAs/Ge solar cells using electroluminescence measurements

Autor: Sebastian Roensch, Raymond Hoheisel, Frank Dimroth, Andreas W. Bett

Publikováno v: Applied Physics Letters. 98:251113

The I-V characteristics of the individual subcells of a monolithic Ga0.50In0.50P/Ga0.99In0.01As/Ge triple-junction solar cell have been extracted from measurements of the electroluminescence peak intensity as a function of the electroluminescence inj

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6af5360af5e7189916a4d427ca7aec8c
https://doi.org/10.1063/1.3601472

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání