Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sebastian Roensch"'
Autor:
Michael Krieger, Heiko B. Weber, Sebastian Roensch, Stefan Hertel, Sergey A. Reshanov, Adolf Schöner
Publikováno v:
Materials Science Forum. :436-439
The electrically active deep levels in a graphene / silicon carbide field effect transistor (FET) were investigated by drain-current deep level transient spectroscopy (ID-DLTS). An evaluation procedure for ID-DLTS is developed in order to obtain the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::833e27b5325c5948ce10f89358d7654f
https://doi.org/10.4028/www.scientific.net/msf.778-780.436
https://doi.org/10.4028/www.scientific.net/msf.778-780.436
Autor:
Victor Sizov, Michael Krieger, Markus Sickmoeller, Lars Groh, Takuma Yagi, Stephan Lutgen, Saad Murad, Heiko B. Weber, Sebastian Roensch
Publikováno v:
Materials Science Forum. :1180-1184
We present temperature dependent magnetoresistance measurements on the 2-dimensional electron gas of epitaxially grown AlGaN/GaN heterojunctions on silicon (Si). We report on the quantum correction to the classical conductance. In particular we found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b260784c47cdca55e7b0db634d40c34c
https://doi.org/10.4028/www.scientific.net/msf.778-780.1180
https://doi.org/10.4028/www.scientific.net/msf.778-780.1180
Autor:
Victor Sizov, Stephan Lutgen, Michael Krieger, Lars Groh, Heiko B. Weber, Saad Murad, Takuma Yagi, Sebastian Roensch
Publikováno v:
Materials Science Forum. :502-505
The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was investigated in a range of 30 K - 340 K. The AlN spacer has a strong impact on the mobility at temperatures bel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c85a7e09fdd9e8e056af0822eb587ecb
https://doi.org/10.4028/www.scientific.net/msf.740-742.502
https://doi.org/10.4028/www.scientific.net/msf.740-742.502
Publikováno v:
Applied Physics Letters. 98:251113
The I-V characteristics of the individual subcells of a monolithic Ga0.50In0.50P/Ga0.99In0.01As/Ge triple-junction solar cell have been extracted from measurements of the electroluminescence peak intensity as a function of the electroluminescence inj
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6af5360af5e7189916a4d427ca7aec8c
https://doi.org/10.1063/1.3601472
https://doi.org/10.1063/1.3601472
Publikováno v:
Applied Physics Letters; 6/20/2011, Vol. 98 Issue 25, p251113, 3p
Autor:
Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki, Yasuhisa Sano
Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 – October 4, 2013, Miyazaki, Japan
Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2 -6, 2012, St. Petersburg, Russian Federation
Autor:
Michael Fuchs
In den öffentlichen Debatten spielen das Alter und das Altern zunehmend wichtige Rollen. Der demographische Wandel, die alternde Gesellschaft und die daraus resultierenden Probleme und Fragen bedingen es, dass sich mit dem Thema nahezu alle akademis