Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Sebastian Mogg"'
Autor:
N. Chitica, Carl Asplund, Mattias Hammar, Sebastian Mogg, Ulf Christiansson, Petrus Sundgren, Richard Schatz
Publikováno v:
IEEE Journal of Quantum Electronics. 40:453-462
Record-long emission wavelengths up to 1.3 /spl mu/m have recently been demonstrated from highly strained InGaAs-GaAs double-quantum-well (DQW) vertical-cavity surface-emitting lasers (VCSELs). The operation of InGaAs VCSELs at such long wavelengths
Publikováno v:
Review of Scientific Instruments. 73:1697-1701
This article reports on a modified cavity phase-shift (CAPS) method for accurate and reliable characterization of high reflectance mirrors. Our approach relies on using a directly modulated Fabry-P ...
Publikováno v:
Journal of Applied Physics. 90:794-800
We have studied n- and p-type doping-induced performance degradation of AlAs/GaAs distributed Bragg reflectors (DBRs) for applications in vertical cavity lasers (VCLs). Based on high-accuracy optical reflectance and triple-axis x-ray diffraction meas
Publikováno v:
Applied Physics Letters. 81:2334-2336
The properties of 1.2-μm highly strained InGaAs quantum wells (QWs) grown on GaAs substrates have been analyzed. Optical gain spectra versus injection current and temperature, transparency current density, as well as other figures of merit were asse
Autor:
Sebastian Mogg, V. Oscarsson, Ulf Christiansson, E. Odling, Thomas Aggerstam, Mattias Hammar, C. Runnstrom, Petrus Sundgren, J. Malmquist, Carl Asplund
Publikováno v:
SPIE Proceedings.
In this work we present performance characteristics of metalorganic vapor-phase epitaxy grown GaInNAs and InGaAs quantum-well (QW) vertical-cavity lasers (VCLs) for 1.3-IŒm applications. The InGaAs ...
Autor:
V. Oscarsson, Petrus Sundgren, Ulf Christiansson, Elsy Oedling, Mattias Hammar, Sebastian Mogg, Thomas Aggerstam, Carl Asplund, J. Malmquist, Christine Runnstroem
Publikováno v:
SPIE Proceedings.
We compare GaInNAs and highly strained InGaAs quantum-wells (QWs) for applications in metal-organic vapor-phase epitaxy (MOVPE)-grown GaAs-based 1300-nm vertical-cavity lasers (VCLs). While the peak wavelength of InGaAs QWs can be extended by a small
Autor:
Joachim Piprek, Sebastian Mogg
Publikováno v:
SPIE Proceedings.
We present a study of barrier height effects on the high-temperature performance of 1.3 micron strained layer InGaAsP/InP quantum well lasers. Broad-area Fabry-Perot lasers were fabricated and their light-current characteristics were measured at temp
Autor:
M. Chacinski, Rickard Marcks von Würtemberg, Jesper Berggren, Mattias Hammar, Sebastian Mogg, Petrus Sundgren, Richard Schatz, Olle Kjebon
Publikováno v:
Applied Physics Letters. 86:211109
The dynamic performance of InGaAs/GaAs 1.27 m m single-mode vertical cavity surface emitting lasers (VCSELs) is presented. In order to reach such a long wavelength, the devices utilize highl ...
Autor:
Carl Asplund, J. Malmquist, Ulf Christiansson, V. Oscarsson, C. Runnstrom, E. Odling, Petrus Sundgren, Sebastian Mogg, Mattias Hammar
Publikováno v:
Electronics Letters. 38:635
The fabrication and performance of highly strained double-quantum well InGaAs/GaAs vertical-cavity lasers with record-long emission wavelength of 1260 nm at room temperature is reported. Depending on device diameter, the minimum threshold current is
Autor:
Carl Asplund, Glenn Yves Plaine, Petrus Sundgren, F. Salomonsson, Mattias Hammar, Sebastian Mogg
Publikováno v:
Electronics Letters. 37:957
The growth and characterisation of high performance InGaAs/GaAs quantum-well vertical cavity lasers with an emission wavelength of 1215 nm is reported. Continuous wave operation is demonstrated up ...