Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Sebastian Krause"'
Autor:
Friedbert van Raay, Fabian Thome, Christian Friesicke, Roger Lozar, Sebastian Krause, Michael Mikulla, Rudiger Quay
Publikováno v:
2022 52nd European Microwave Conference (EuMC).
Publikováno v:
Journal of Biological Chemistry. 299:104703
Autor:
Florian Schubert, Felix Beulig, Rishi Ram Adhikari, Clemens Glombitza, Verena Heuer, Kai-Uwe Hinrichs, Kira Homola, Fumio Inagaki, Bo Barker Jørgensen, Jens Kallmeyer, Sebastian Krause, Yuki Morono, Justine Sauvage, Arthur Spivack, Tina Treude
A fourth of the global seabed sediment volume is buried at depths where temperatures exceed 80 °C, a previously proposed thermal barrier for life in the subsurface. Here, we demonstrate, utilizing an extensive suite of radiotracer experiments, the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a28e79aad7aae0f4d4c181a9c953150
https://doi.org/10.5194/egusphere-egu22-2909
https://doi.org/10.5194/egusphere-egu22-2909
Autor:
Jiarui Liu, Rachel Harris, Jeanine Ash, James Ferry, Jabrane Labidi, Sebastian Krause, Divya Prakash, Barbara Sherwood Lollar, Tina Treude, Oliver Warr, Edward Young
Publikováno v:
Goldschmidt2022 abstracts.
Publikováno v:
ACL/IJCNLP (2)
This paper presents a simple recipe to train state-of-the-art multilingual Grammatical Error Correction (GEC) models. We achieve this by first proposing a language-agnostic method to generate a large number of synthetic examples. The second ingredien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e14f5da79dbb4592b93ec90992548bff
http://arxiv.org/abs/2106.03830
http://arxiv.org/abs/2106.03830
Autor:
Stefanie Wilhelm, Sebastian Krause, Andrés González Delgado, Karlheinz Friedrich, Tabea Barthel, Andreas Wohlmann, Iva Marković, Matthias Schirmer
Publikováno v:
Cytokine. 113:228-237
Cytokines and growth factors are signaling proteins involved in communication processes between cells. They are involved in the control of numerous essential physiological processes such as cell proliferation, gene transcription and differentiation;
Autor:
M. Baeumler, Peter Brückner, Michael Dammann, Helmer Konstanzer, Michél Simon-Najasek, Andreas Graff, Sebastian Krause, Tobias Kemmer
Publikováno v:
IRPS
Degradation of 100 nm AlGaN/GaN HEMTs under DC and 10 GHz stress conditions has been compared and a promising median lifetime of more than 2000 h under RF stress in air at a drain voltage of 15 V and an average channel temperature of 230°C has been
Autor:
Peter Brückner, Oliver Ambacher, Christian Friesicke, Hermann Massler, Maciej Cwiklinski, Rudiger Quay, Stefano Leone, Sebastian Krause
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
We report on two state-of-the-art G-band (140–220 GHz) GaN amplifiers. Employing a novel concept of a broadband and compact interstage matching network allows for incorporating a high number of gain stages. The first 10-stage amplifier (AMPl) can p
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this paper we report on the development of a 0.50 µm AlGaN/GaN on SiC technology optimized for 100-V operation. Load pull measurements reveal a power density of more than 17 W/mm and a power-added efficiency of 77.3 % at a frequency of 1.0 GHz an
Autor:
Sebastian Krause, Maciej Cwiklinski, Dirk Schwantuschke, Stefano Leone, Rudiger Quay, Peter Brückner, Michael Mikulla, Tobias Kemmer, Michael Dammann
Publikováno v:
Web of Science
This paper gives the state-of-the-art (SOA) of the technological development and the reliability status of deep-submicron Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) with gate lengths of 100 nm or below. Several process technolog