Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Sebastian Killge"'
Autor:
Zaid Al-Husseini, Ronny Henker, Laszlo Szilagyi, Niels Neumann, Johann W. Bartha, Dirk Plettemeier, Sujay Charania, Felix Winkler, Frank Ellinger, Sebastian Killge
Publikováno v:
Journal of Lightwave Technology. 38:3454-3460
While conventional silicon photonic (SiP) waveguides achieve high data rates with low loss, they can only be placed on top of the chip surfaces horizontally. In this article, we present a design approach for multimode chip-to-chip interconnects with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edf95757d5c53ef0565e67557f864fd7
https://doi.org/10.1109/jlt.2020.2971394
https://doi.org/10.1109/jlt.2020.2971394
Publikováno v:
Microelectronic Engineering. 211:13-17
The nucleation of TaCN films during plasma enhanced atomic layer deposition (PEALD) using pentakis-(dimethylamino)tantalum (PDMAT) in combination with H2/Ar plasma was investigated on several substrate surfaces by X-ray photoelectron spectroscopy (XP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df77092a099ca46847561c168e15182f
https://doi.org/10.1016/j.mee.2019.03.005
https://doi.org/10.1016/j.mee.2019.03.005
Autor:
Johanna Reif, Martin Knaut, Sebastian Killge, Matthias Albert, Thomas Mikolajick, Johann W. Bartha
Publikováno v:
Journal of Vacuum Science & Technology A. 40:032602
Controlled thin film etching is essential for future semiconductor devices, especially with complex high aspect ratio structures. Therefore, self-limiting atomic layer etching processes are of great interest to the semiconductor industry. In this wor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e905dde2f693c524931bd7e96a3cf94
https://doi.org/10.1116/6.0001630
https://doi.org/10.1116/6.0001630
Autor:
M. Jurgen Wolf, Matthias Albert, Christian Wenzel, Marcel Junige, Sebastian Killge, Mathias Böttcher, Johanna Reif, Johann W. Bartha, Volker Neumann, Irene Bartusseck
Publikováno v:
Microelectronic Engineering. 205:20-25
The copper electrochemical deposition (Cu-ECD) filling capability of high aspect ratio through silicon vias (HAR-TSVs) and homogeneity over 300 mm wafers were investigated on a film stack of thermal ALD (thALD) TaxNy barrier with thermal ALD Ru seed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff5e3f7341e4396ffdc41e6f8cade3e4
https://doi.org/10.1016/j.mee.2018.11.006
https://doi.org/10.1016/j.mee.2018.11.006
Autor:
Dirk Plettemeier, Krzysztof Nieweglowski, Niels Neumann, Sujay Charania, Sebastian Lungen, Zaid Al-Husseini, Karlheinz Bock, Sebastian Killge, Johann W. Bartha
Publikováno v:
SPIE Proceedings.
Current trends in electronic industry, such as Internet of Things (IoT) and Cloud Computing call for high interconnect bandwidth, increased number of active devices and high IO count. Hence the integration of on silicon optical waveguides becomes an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d75b741bc882852c164700c9ff1c1cc
https://doi.org/10.1117/12.2264811
https://doi.org/10.1117/12.2264811
Autor:
Lukas Lorenz, Krzysztof Nieweglowski, Johann W. Bartha, Sebastian Killge, Sebastian Lungen, Tobias Tiedje, Sujay Charania, Karlheinz Bock
Publikováno v:
2017 IEEE 67th Electronic Components and Technology Conference (ECTC).
In this work we discuss optical coupling technologies for the manufacturing of out-of-plane optics integrated in planar waveguide for interposer-and board-level. Each technology is evaluated on a silicon interposer with optical dielectric through sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abd1a812d92d43ed0445a74bf57d2918
https://doi.org/10.1109/ectc.2017.273
https://doi.org/10.1109/ectc.2017.273
Autor:
Johann W. Bartha, Matthias Albert, Felix Winkler, Johanna Reif, Sebastian Killge, Martin Knaut
Publikováno v:
Journal of Vacuum Science & Technology A. 38:012405
Plasma-enhanced atomic layer deposition (PE-ALD) of cobalt (Co) using cyclopentadienylcobalt dicarbonyl [CpCo(CO)2] combined with hydrogen, nitrogen, ammonia, and argon based plasma gases was investigated. The utilized ALD tool was clustered to an ul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e278abe276e4fee4dd3215fe70b0e11
https://doi.org/10.1116/1.5132891
https://doi.org/10.1116/1.5132891
Autor:
Felix Winkler, S. Völkel, Johann W. Bartha, Karola Richter, B. Leszczynska, Johanna Reif, C. Strobel, Matthias Albert, Sebastian Killge, André Hiess, Ch. Wenger, Martin Knaut, S. Leszczynski, Carlos Alvarado Chavarin
Publikováno v:
Journal of Applied Physics. 125:234501
A novel transistor with a graphene base embedded between two n-type silicon emitter and collector layers (graphene-base heterojunction transistor) is fabricated and characterized electrically. The base voltage controlled current of the device flows v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb608b01850e4837cbb083be478dcee
https://doi.org/10.1063/1.5093167
https://doi.org/10.1063/1.5093167
Autor:
Ronny Henker, Frank Ellinger, Sebastian Killge, Sujay Charania, Dirk Plettemeier, Zaid Al-Husseini, Niels Neumann, Johann W. Bartha
In future, computing platforms will invoke massive parallelism by using a huge number of processing elements. These elements need broadband interconnects to communicate with each other. Following More-than-Moore concepts, soon large numbers of proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18aa39a5546b3f37368754e88690b391
https://tud.qucosa.de/id/qucosa:35148
https://tud.qucosa.de/id/qucosa:35148
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
The continuously increasing demand for higher bandwidth makes the application of an optical chip to chip interconnect system conceivable. Based on the assumption of a 3D chip package two essential ingredients of such a system are the availability of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4000b6a6b90c17fc308d1a95045f1d5
https://doi.org/10.1109/iitc-amc.2016.7507702
https://doi.org/10.1109/iitc-amc.2016.7507702