Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Sebastian Carbonetto"'
Publikováno v:
2022 IEEE Biennial Congress of Argentina (ARGENCON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fea75414dabff50449257e5728fe0a9
https://doi.org/10.1109/argencon55245.2022.9939733
https://doi.org/10.1109/argencon55245.2022.9939733
Autor:
Sebastian Carbonetto, Luciano Genovese, Lucas Sambuco Salomone, Mariano Garcia-Inza, Eduardo Gabriel Redin, Adrian Faigon
Publikováno v:
2021 IEEE 22nd Latin American Test Symposium (LATS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d3bc97241f2e83b84a4609471688f91
https://doi.org/10.1109/lats53581.2021.9651839
https://doi.org/10.1109/lats53581.2021.9651839
Publikováno v:
2020 Argentine Conference on Electronics (CAE).
In this paper we review the main aspects of MOS dosimetry. MOS dosimeters have been used for the last 50 years, and its performance has improved since then. To understand how a MOS dosimeter works its limitations and the different strategies to overc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0777d6953ac382aba7e6ec21ee0bdbc5
https://doi.org/10.1109/cae48787.2020.9046369
https://doi.org/10.1109/cae48787.2020.9046369
Floating Gate sensor for in-vivo dosimetry in radiation therapies: design and first characterization
Publikováno v:
CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
A floating gate dosimeter was designed and fabricated in a standard CMOS technology. The design guides and characterization are presented. The characterization included the controlled charging by tunneling of the floating gate, and its discharging un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28e18aaaed253363140c6a449bb6cc8e
http://iopscience.iop.org/article/10.1088/1742-6596/792/1/012057
http://iopscience.iop.org/article/10.1088/1742-6596/792/1/012057
Publikováno v:
Revista Elektrón, Vol 5, Iss 2, Pp 100-104 (2021)
The radiation response of programmed/erased floating gate cells is studied by numerical simulations through a recently developed physics-based numerical model. The role played by oxide trapped charge in the overall threshold voltage shift with dose i
Externí odkaz:
https://doaj.org/article/9ff63f51a5744bc095c531c09386522d