Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Sebastian Bichelmaier"'
Autor:
Bichelmaier, Sebastian
In der vorliegenden Arbeit wurde das in der Halbleiterindustrie verwendete Material Titan-Wolfram, das als Adh��sionsschicht und Diffusionsbarriere eingesetzt wird, mit Dichtefunktionaltheorie (VASP) und (harter) R��ntgenphotoelektronenspektr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fafa25cbf64a777d73c1d4b599146379
Publikováno v:
Physical Review B. 107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cadd82b6671db4e0f0701d266a5a4ad
https://doi.org/10.1103/physrevb.107.184111
https://doi.org/10.1103/physrevb.107.184111
Autor:
Ralf Wanzenböck, Marco Arrigoni, Sebastian Bichelmaier, Florian Buchner, Jesús Carrete, Georg K. H. Madsen
Publikováno v:
Digital Discovery. 1:703-710
The covariance matrix adaptation evolution strategy (CMA-ES) and a fully automatically differentiable, transferable neural-network force field are combined to explore TiOx overlayer structures on SrTiO3(110) 3×1, 4×1 and 5×1 surfaces.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e3b8466bc950da85c068b4e65b2114f
https://doi.org/10.1039/d2dd00072e
https://doi.org/10.1039/d2dd00072e
Publikováno v:
International Journal of Quantum Chemistry. 123
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4348b366ab4b4500865bd28795c3e6dc
https://doi.org/10.1002/qua.27095
https://doi.org/10.1002/qua.27095
Autor:
Hadrián Montes-Campos, Jesús Carrete, Sebastian Bichelmaier, Luis M. Varela, Georg K. H. Madsen
Publikováno v:
Journal of Chemical Information and Modeling
We present NeuralIL, a model for the potential energy of an ionic liquid that accurately reproduces first-principles results with orders-of-magnitude savings in computational cost. Built on the basis of a multilayer perceptron and spherical Bessel de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2076147a5a4bf9884a4e6cf6721b0330
https://pubmed.ncbi.nlm.nih.gov/34941253
https://pubmed.ncbi.nlm.nih.gov/34941253
Autor:
Anna Regoutz, Curran Kalha, J. Zechner, Pardeep K. Thakur, J. J. Gutiérrez Moreno, Judith Berens, M. Reisinger, Laura E. Ratcliff, Sebastian Bichelmaier, Stephan Mohr, Nathalie K. Fernando, Michael Nelhiebel, Ty Lee
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Universitat Politècnica de Catalunya (UPC)
The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallization scheme into the surrounding silicon substructure. How
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b3762ba8c2b2d9f2b30ade3f2aaf698
http://arxiv.org/abs/2102.09845
http://arxiv.org/abs/2102.09845
Autor:
Tomas Wiell, Manesh V. Mistry, Anna Regoutz, J. Matthias Kahk, Thomas Aichinger, Judith Berens, Sebastian Bichelmaier, Nathalie K. Fernando, Pardeep K. Thakur, Susanna K. Eriksson, Gregor Pobegen, Manfred Mascheck, Tien-Lin Lee, Johannes Lischner
SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc1be92a8fc9d7f7316f610cccf415c5
Autor:
Bichelmaier, Sebastian1,2 (AUTHOR), Carrete, Jesús1 (AUTHOR), Madsen, Georg K. H.1 (AUTHOR) georg.madsen@tuwien.ac.at
Publikováno v:
International Journal of Quantum Chemistry. 6/5/2023, Vol. 123 Issue 11, p1-11. 11p.
Autor:
Kourehpaz, Mahdi1 (AUTHOR), Donsa, Stefan1 (AUTHOR), Lackner, Fabian1 (AUTHOR), Burgdörfer, Joachim1 (AUTHOR), Březinová, Iva1 (AUTHOR) iva.brezinova@tuwien.ac.at
Publikováno v:
Entropy. Dec2022, Vol. 24 Issue 12, p1740. 25p.
Publikováno v:
Nanoscale; 5/7/2024, Vol. 16 Issue 17, p8181-8192, 12p