Výsledky vyhledávání - "Sebastiá, A."

This work proposes a methodology to estimate the statistical distribution of the probability that a 6T bit-cell starts up to a given logic value in SRAM memories for PUF applications. First, the distribution is obtained experimentally in a 65-nm CMOS

Externí odkaz: http://arxiv.org/abs/2412.04125

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Estimation during Design Phases of Suitable SRAM Cells for PUF Applications Using Separatrix and Mismatch Metrics

Autor: Alheyasat, Abdel, Torrens, Gabriel, Bota, Sebastia A., Alorda, Bartomeu

Publikováno v: Electronics 2021, 10(12), 1479

Physically unclonable functions (PUFs) are used as low-cost cryptographic primitives in device authentication and secret key creation. SRAM-PUFs are well-known as entropy sources; nevertheless, due of non-deterministic noise environment during the po

Externí odkaz: http://arxiv.org/abs/2412.01560

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A 65-nm Reliable 6T CMOS SRAM Cell with Minimum Size Transistors

Autor: Torrens, Gabriel, Alorda, Bartomeu, Carmona, Cristian, Malagon-Perianez, Daniel, Segura, Jaume, Bota, Sebastia Antoni

Publikováno v: IEEE Transactions on Nuclear Science, vol. 7, no. 3, pp. 447-455, Jul-Sep 2019

As minimum area SRAM bit-cells are obtained when using cell ratio and pull-up ratio of 1, we analyze the possibility of decreasing the cell ratio from the conventional values comprised between 1.5-2.5 to 1. The impact of this option on area, power, p

Externí odkaz: http://arxiv.org/abs/2411.18114

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Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

Autor: Malagon, Daniel, Torrens, Gabriel, Segura, Jaume, Bota, Sebastia A.

Publikováno v: Microelectronics Reliability, Volume 110, art. no. 113696, 2020

We present experimental results of the cross-section related to cosmic-ray irradiation at ground level for minimum-sized six-transistors (6T) and eight-transistors (8T) bit-cells SRAM memories implemented on a 65 nm CMOS standard technology. Results

Externí odkaz: http://arxiv.org/abs/2411.17198

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An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies

Autor: Alorda, Bartomeu, Carmona, Cristian, Torrens, Gabriel, Bota, Sebastia

Publikováno v: Microelectronics Reliability, Volume 65, pp. 280-288, 2016

Increased process variability and reliability issues present a major challenge for future SRAM trends. Non-intrusive and accurate SRAM stability measurement is crucial for estimating yield in large SRAM arrays. Conventional SRAM variability metrics r

Externí odkaz: http://arxiv.org/abs/2411.15521

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Multiphysics continuum mechanics models to advance glaucoma research: State-of-the-art and future perspectives

Autor: Sebastia-Saez, Daniel, Luo, Jinyuan, Qin, Mengqi, Chen, Tao, Yu-Wai-Man, Cynthia

This review provides a broad vision on the use of mechanistic mathematical models based on continuum mechanics to tackle current challenges in glaucoma research. At present, the advent of Artificial Intelligence and data-based models have resulted in

Externí odkaz: http://arxiv.org/abs/2411.06539

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