Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sebastià A. Bota"'
Publikováno v:
Electronics; Volume 11; Issue 1; Pages: 135
Electronics, Vol 11, Iss 135, p 135 (2022)
Electronics, Vol 11, Iss 135, p 135 (2022)
This work proposes a methodology to estimate the statistical distribution of the probability that a 6T bit-cell starts up to a given logic value in SRAM memories for PUF applications. First, the distribution is obtained experimentally in a 65-nm CMOS
Publikováno v:
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2014.
Publikováno v:
IOLTS
In this work we analyze the effects of radiation-induced transient pulses on 6T SRAM cells operating in read mode. The critical charge of a memory cell during read mode is lower than in hold mode. For 1 to 0 upsets, this reduction reaches a factor x1
Publikováno v:
2007 Design, Automation & Test in Europe Conference & Exhibition.