Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Sean Yoon"'
Effect of Process Orientation on the Mechanical Behavior and Piezoelectricity of Electroactive Paper
Publikováno v:
Materials, Vol 13, Iss 1, p 204 (2020)
This paper reports the effect of process orientation on the mechanical behavior and piezoelectricity of electroactive paper (EAPap) made from natural cotton pulp. EAPap is fabricated by a casting and wet drawing of cellulose film after dissolving cot
Externí odkaz:
https://doaj.org/article/ada1718ffaef4fdf81b4ab21e6fc57c5
Effect of Process Orientation on the Mechanical Behavior and Piezoelectricity of Electroactive Paper
Publikováno v:
Materials, Vol 13, Iss 1, p 204 (2020)
Materials
Volume 13
Issue 1
Materials
Volume 13
Issue 1
This paper reports the effect of process orientation on the mechanical behavior and piezoelectricity of electroactive paper (EAPap) made from natural cotton pulp. EAPap is fabricated by a casting and wet drawing of cellulose film after dissolving cot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13903aa5929622550e18585295d6a990
https://www.mdpi.com/1996-1944/13/1/204
https://www.mdpi.com/1996-1944/13/1/204
Autor:
Yidan Qin, Seung K. Park, Jennifer L. Stamos, Jacob K. Grohman, Jun Yao, Georg Mohr, Sean Yoon-Seo Kang, Alan M. Lambowitz
Publikováno v:
Journal of molecular biology. 430(17)
The thermostable Geobacillus stearothermophilus GsI-IIC intron is among the few bacterial group II introns found to proliferate to high copy number in its host genome. Here, we developed a bacterial genetic assay for retrohoming and biochemical assay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ceb34375ac485924a33fa458c9d4fc2
https://pubmed.ncbi.nlm.nih.gov/29913158
https://pubmed.ncbi.nlm.nih.gov/29913158
Akademický článek
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Publikováno v:
Materials Science in Semiconductor Processing. 7:157-163
Multi-link statistical test structures were used to study the effect of low k dielectrics on EM reliability of Cu interconnects. Experiments were performed on dual-damascene Cu interconnects integrated with oxide, CVD low k, porous MSQ, and organic p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50760bb04b89c258cc82489e295722d9
https://doi.org/10.1016/j.mssp.2004.06.005
https://doi.org/10.1016/j.mssp.2004.06.005
Publikováno v:
Applied Physics Letters. 82:2032-2034
Electromigration (EM) reliability was investigated for Cu/porous low k interconnects. The porous low k dielectric was a methylsilsesquioxane (MSQ) based spin-on organosilicate material with k of 2.2. The activation energy for EM failure was found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c332d973210d1a28d06150ad5694b332
https://doi.org/10.1063/1.1564294
https://doi.org/10.1063/1.1564294
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
We investigated the scaling effects due to line width and barrier thickness on electromigration in Cu/low-k (porous MSQ) interconnects. Multilink test structures were used to measure the statistics of the weak-mode early failures and the strong-mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04a3150a56922dbc9d57267782fd5f1b
https://doi.org/10.1109/relphy.2005.1493083
https://doi.org/10.1109/relphy.2005.1493083
Publikováno v:
5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, 2004. EuroSimE 2004. Proceedings of the.
Summary form only given. This paper discusses the reliability issues for Cu/low k interconnects, focusing on the impact due to the thermomechanical properties of low k dielectrics. Several basic questions arise concerning the dielectric effects on in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ab557cf9c30b38fea4db2dc030ef4d3
https://doi.org/10.1109/esime.2004.1304017
https://doi.org/10.1109/esime.2004.1304017
Publikováno v:
Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).
Electromigration (EM) statistics and critical current-density line-length product (jL)/sub c/ were investigated for Cu interconnects integrated with oxide, CVD low k, porous MSQ, organic polymer dielectrics. The EM activation energy was found to be a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::032b30fc76c7c6d648773e253d058d54
https://doi.org/10.1109/iitc.2003.1219770
https://doi.org/10.1109/iitc.2003.1219770
Autor:
Paul S. Ho, P. Cresta, Sadasivan Shankar, Allan F. Bower, Dongwen Gan, N. Singh, Jihperng Leu, Sean Yoon
Publikováno v:
Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).
In this study, we investigate the effect of passivation layer on mass transport by measuring stress relaxation in Cu damascene line structures. SiC and SiN/sub x/ passivation layers are investigated and compared with no passivation to examine the bon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e13a93d763e5b601999a417d2f247304
https://doi.org/10.1109/iitc.2003.1219748
https://doi.org/10.1109/iitc.2003.1219748