Zobrazeno 1 - 10
of 207
pro vyhledávání: '"Sean W. King"'
Autor:
Md. Rafiqul Islam, Pravin Karna, John A. Tomko, Eric R. Hoglund, Daniel M. Hirt, Md Shafkat Bin Hoque, Saman Zare, Kiumars Aryana, Thomas W. Pfeifer, Christopher Jezewski, Ashutosh Giri, Colin D. Landon, Sean W. King, Patrick E. Hopkins
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract As metallic nanostructures shrink towards the size of the electronic mean free path, thermal conductivity decreases due to increased electronic scattering rates. Matthiessen’s rule is commonly applied to assess changes in electron scatteri
Externí odkaz:
https://doaj.org/article/bd78f8ef7ed249f89adcfcca5701f951
Autor:
Gheorghe Stan, Richard S. Gates, Qichi Hu, Kevin Kjoller, Craig Prater, Kanwal Jit Singh, Ebony Mays, Sean W. King
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 863-871 (2017)
The exploitation of nanoscale size effects to create new nanostructured materials necessitates the development of an understanding of relationships between molecular structure, physical properties and material processing at the nanoscale. Numerous me
Externí odkaz:
https://doaj.org/article/26d0c8049ef14e31beacd9d72e18bab5
Autor:
Bradley J. Nordell, Thuong D. Nguyen, Anthony N. Caruso, William A. Lanford, Patrick Henry, Han Li, Liza L. Ross, Sean W. King, Michelle M. Paquette
Publikováno v:
Frontiers in Materials, Vol 6 (2019)
Topological constraint theory (TCT) has revealed itself to be a powerful tool in interpreting the behaviors of amorphous solids. The theory predicts a transition between a “rigid” overconstrained network and a “floppy” underconstrained networ
Externí odkaz:
https://doaj.org/article/ad3c215889544718b857dbb899300da6
Publikováno v:
APL Materials, Vol 6, Iss 5, Pp 058001-058001-2 (2018)
Externí odkaz:
https://doaj.org/article/5e8dcfcd653b42a793094c2058010e94
Publikováno v:
APL Materials, Vol 6, Iss 5, Pp 058302-058302-8 (2018)
The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to deposit high dielectric constant (high-k) films via ALD has a
Externí odkaz:
https://doaj.org/article/30346a3ef62747d7915a935eeec40491
Publikováno v:
APL Materials, Vol 1, Iss 4, Pp 040701-040701 (2013)
Recent discussions concerning the continuation of Moore's law have focused on announcements by several major corporations to transition from traditional 2D planar to new 3D multi-gate field effect transistor devices. However, the growth and progressi
Externí odkaz:
https://doaj.org/article/db5470e2dd0044c7be42e943d66ed964
Autor:
Vamseedhara Vemuri, Sean W. King, William A. Lanford, John T. Gaskins, Patrick Edward Hopkins, Jeremy Van Derslice, Han Li, Nicholas C. Strandwitz
Publikováno v:
Chemistry of Materials. 35:1916-1925
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0aa24decd349b3219fe9fb330ef8ba16
https://doi.org/10.1021/acs.chemmater.2c03107
https://doi.org/10.1021/acs.chemmater.2c03107
Autor:
Sandip Thakur, Connor Jaymes Dionne, Pravin Karna, Sean W. King, William Lanford, Han Li, Shouvik Banerjee, Devin Merrill, Patrick E. Hopkins, Ashutosh Giri
Publikováno v:
Physical Review Materials. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::196d90f6c5c96ceb85a9732d74c5c073
https://doi.org/10.1103/physrevmaterials.6.094601
https://doi.org/10.1103/physrevmaterials.6.094601
Autor:
Sanjay K. Banerjee, Christopher W. Bielawski, Markus Kuhn, Sean W. King, Todd W. Hudnall, Donghyi Koh, Justin S. Brockman
Publikováno v:
ECS Transactions. 102:127-138
Beryllium oxide (BeO) is a wurtzite structured, large bandgap (E g > 8 eV) material of significant interest as an alloying agent and cladding dielectric in various oxide based optoelectronic devices. The success of such devices is highly reliant on b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ee934671fe556d88aba886731a91c3f
https://doi.org/10.1149/10203.0127ecst
https://doi.org/10.1149/10203.0127ecst
Autor:
Nicholas J. Harmon, James P. Ashton, Michael E. Flatté, Sean W. King, Stephen J. Moxim, Patrick M. Lenahan
Publikováno v:
IEEE Transactions on Nuclear Science. 67:228-233
We report high and low-frequency electrically detected magnetic resonance measurements and near-zero-field magnetoresistance measurements on radiation-induced leakage currents in irradiated Si/SiO2 metal-oxide-silicon (MOS) structures. This study ide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40525b2f1df7b5cae2e5caaf136c7e8a
https://doi.org/10.1109/tns.2019.2958351
https://doi.org/10.1109/tns.2019.2958351