Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Sean Valente"'
Autor:
Jamie Prudhomme, Alexander Bialy, Daniel Franca, Nick Yun, Pui Yee Hung, Brian Sapp, Woongje Sung, Thomas Bert Gorczyca, Anne Sophie Larrea, Wen Li Collison, Eric Liu, Sean Valente, Shannon Dunn, Jeffrey Hedrick
Publikováno v:
Materials Science Forum. 963:558-561
This paper presents the development of 1700V-rated 4H-SiC JBS diodes in the state-of-the-art 6-inch SiC-dedicated foundry, NY-PEMC (New York- Power Electronics Manufacturing Consortium). The critical considerations in developing the SiC JBS diode inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ff56c5e7eb838f9addad2d9b93ff9ca
https://doi.org/10.4028/www.scientific.net/msf.963.558
https://doi.org/10.4028/www.scientific.net/msf.963.558
Autor:
Cecilia Montgomery, Ken Matthews, Kevin Cummings, JunSung Chun, Paul D. Ashby, Yu-Jen Fan, Sean Valente, Mark Neisser
Publikováno v:
SPIE Proceedings.
EUV lithography is needed by the semiconductor industry for both its resolution and for the process simplification it provides compared to multiple patterning. However it needs innovations to make it a success. One area where innovation is needed is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2f2895c51198ee66d64f94d9aa2646c
https://doi.org/10.1117/12.2086307
https://doi.org/10.1117/12.2086307