Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Sean D. Burns"'
Publikováno v:
Design-Process-Technology Co-optimization XV.
We propose a machine-learning-based mechanism to perform OPC, which is much more efficient than traditional OPC processes in terms of compute resources. Building a physical model for OPC takes a lot of labor and computational time, for example, model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::842561759419e20b7fe260962c0254eb
https://doi.org/10.1117/12.2584621
https://doi.org/10.1117/12.2584621
Autor:
Jeff Shearer, Geng Han, Oseo Park, Jing Guo, Cheng Chi, Charlie King, Hao Tang, Jing Xue, Sean D. Burns
Publikováno v:
Optical Microlithography XXXIII.
Corner rounding improvement is critical to device performance, yield, and cell area reduction. In this paper, we present a method to use dual tone sub-resolution assist feature (SRAF) to improve both the outer corner rounding and inner corner roundin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfbfcbc4e5762638c2f7cda8cf8b1eac
https://doi.org/10.1117/12.2550834
https://doi.org/10.1117/12.2550834
Autor:
Daniel Corliss, Martha I. Sanchez, Doni Parnell, Yongan Xu, Chi-Chun Liu, Jing Guo, Lovejeet Singh, Nelson Felix, Yann Mignot, Tsuyoshi Furukawa, David Hetzer, Daniel P. Sanders, Luciana Meli, Sean D. Burns, Kristin Schmidt, Richard A. Farrell, Kafai Lai, John C. Arnold, Cheng Chi, Andrew Metz
Publikováno v:
SPIE Proceedings.
In this study, the integrity and the benefits of the DSA shrink process were verified through a via-chain test structure, which was fabricated by either DSA or baseline litho/etch process for via layer formation while metal layer processes remain the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a4b933760d1c45cd8d50035676700bf
https://doi.org/10.1117/12.2260454
https://doi.org/10.1117/12.2260454
Autor:
Richard A. Farrell, Fee Li Lie, Michael A. Guillorn, Hoa Truong, Elliott Franke, Sean D. Burns, Matthew E. Colburn, Akiteru Ko, Mark Somervell, Nelson Felix, John C. Arnold, David Hetzer, Hsinyu Tsai, Stuart A. Sieg, Kafai Lai, Chi-Chun Liu, Daniel P. Sanders
Publikováno v:
SPIE Newsroom.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0f7f1588d44e7df8463769208c909dc
https://doi.org/10.1117/2.1201606.006519
https://doi.org/10.1117/2.1201606.006519
Autor:
Kerem Akarvardar, K-Y Lim, R. Mo, Bruce B. Doris, Richard G. Southwick, Muthumanickam Sankarapandian, F. Lie, Dechao Guo, Bhagawan Sahu, Huiming Bu, Stuart A. Sieg, Chun Wing Yeung, Junli Wang, Andreas Knorr, Tenko Yamashita, John R. Sporre, Matthew E. Colburn, Nelson Felix, Jody A. Fronheiser, D. K. Sadana, Neeraj Tripathi, Jay W. Strane, R. Divakaruni, P. Oldiges, Gauri Karve, Derrick Liu, T. Hook, Shogo Mochizuki, Nicolas Loubet, Sean D. Burns, Vijay Narayanan, Rajasekhar Venigalla, James Chingwei Li, Pouya Hashemi, Dinesh Gupta, Koji Watanabe, James J. Demarest, Victor Chan, Ruqiang Bao, S. Kanakasabapathy, Robert R. Robison, Mukesh Khare, Stephen W. Bedell, Pietro Montanini, Hemanth Jagannathan, Vamsi Paruchuri, Gen Tsutsui, Kangguo Cheng, James H. Stathis, James J. Kelly, Reinaldo A. Vega, Jacob Ajey Poovannummoottil, Miaomiao Wang
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
SiGe for channel material has been explored as a major technology element after the introduction of FINFET into CMOS technology [1–4]. Research on long channel FETs and discrete short channel FETs demonstrated benefits in mobility [1–4] and relia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9013e63588fce0b723f1726672dc180
https://doi.org/10.1109/vlsit.2016.7573360
https://doi.org/10.1109/vlsit.2016.7573360
Autor:
Matthew E. Colburn, Dan Fischer, Nelson Felix, Sean D. Burns, Yoshifumi Sakamoto, Todd Bailey, Tom Faure, Lin Hu, Ben Bleiman, Granger Lobb, Ioana Graur, Richard Wistrom, John Bolton, Yongan Xu, Ramya Viswanathan, John C. Arnold, Yusuke Toda, Yann Mignot
Publikováno v:
SPIE Proceedings.
In this paper, we discuss the lithographic qualification of high transmission (High T) mask for Via and contact hole applications in 10nm node and beyond. First, the simulated MEEF and depth of focus (DoF) data are compared between the 6% and High T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cf4aad52b54ccc553777f5e5301f37a
https://doi.org/10.1117/12.2219778
https://doi.org/10.1117/12.2219778
Autor:
Richard A. Farrell, Michael A. Guillorn, Sean D. Burns, Kafai Lai, Fee Li Lie, Hsinyu Tsai, Elliott Franke, Stuart A. Sieg, Matthew E. Colburn, Nelson Felix, John C. Arnold, Daniel P. Sanders, David Hetzer, Hoa Truong, Chi-Chun Charlie Liu, Akiteru Ko, Mark Somervell
Publikováno v:
SPIE Proceedings.
Several 27nm-pitch directed self-assembly (DSA) processes targeting fin formation for FinFET device fabrication are studied in a 300mm pilot line environment, including chemoepitaxy for a conventional Fin arrays, graphoepitaxy for a customization app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c0994496273b2831133bf7a7a6a0cd1
https://doi.org/10.1117/12.2219670
https://doi.org/10.1117/12.2219670
Autor:
Sumanth Kini, Andrew Stamper, Charu Tejwani, Sang Y. Chong, Carol Boye, Ralf Buengener, Roland Hahn, Bryan N. Rhoads, Sean D. Burns, Kourosh Nafisi, Colin J. Brodsky, S. Fan
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 24:165-172
PWC (Process Window Centering) is an efficient methodology to validate or adjust and center the overall process window for a particular lithography layer by detecting systematic and random defects. The PWC methodology incorporates a defect inspection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50cfd0b0aee5204dab868442dbd3ea7c
https://doi.org/10.1109/tsm.2011.2106807
https://doi.org/10.1109/tsm.2011.2106807
Autor:
Robert D. Allen, David R. Medeiros, Karen Petrillo, Dirk Pfeiffer, Anthony D. Lisi, Daniel P. Sanders, Shozo Shirai, Dah Chung Owe-Yang, Libor Vylicky, John C. Arnold, Kazumi Noda, Seiichiro Tachibana, Sean D. Burns, Dario L. Goldfarb
Publikováno v:
Journal of Photopolymer Science and Technology. 22:7-11
The Photopolymer Science and Technology Award No. 092100, the Best Paper Award 2009, was presented to Dario L. Goldfarba, Libor Vyklickya, Sean D. Burnsa, Karen Petrillob, John Arnoldb, Anthony Lisib, Dirk Pfeiffera, Daniel P. Sandersc, Robert D. All
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5ed3b2b5e308a7785f8ab69279dd393
https://doi.org/10.2494/photopolymer.22.7
https://doi.org/10.2494/photopolymer.22.7
Autor:
Robert D. Allen, Sean D. Burns, John C. Arnold, Dah Chung Owe-Yang, Dario L. Goldfarb, Kazumi Noda, Seiichiro Tachiban, Dirk Pfeiffer, Anthony D. Lisi, Shozo Shirai, Libor Vyklicky, David R. Medeiros, Daniel D. Sanders, Karen Petrillo
Publikováno v:
Journal of Photopolymer Science and Technology. 21:397-404
A spin-on organic Graded Bottom AntiReflective Coating (GBARC) was developed to enable appropriate reflectivity control during advanced photoresist patterning using 193nm immersion lithography up to 1.35 NA (limits of hyper-NA lithography using water
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b903fb1e0cda62c44a0f1b00fca4404f
https://doi.org/10.2494/photopolymer.21.397
https://doi.org/10.2494/photopolymer.21.397