Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Sea-Chung Kim"'
Autor:
Woodward Yang, Jin-Yong Chung, Sea-Chung Kim, Eui-Kyu Ryou, Seung-Han Ahn, Jae-Kyung Wee, Joe-Sun Choi
Publikováno v:
IEEE Journal of Solid-State Circuits. 35:1408-1414
An antifuse EPROM and 3-V programming circuit has been demonstrated in an existing 0.22-/spl mu/m DRAM process technology and is fully compatible with 64-Mb SDRAM specifications. The antifuse circuitry uses an internal high-voltage generator for prog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f959a40b6c1054a29af8a60852b7845
https://doi.org/10.1109/4.871316
https://doi.org/10.1109/4.871316
Autor:
null Joo-Sun Choi, null Jae-Kyung Wee, null Ho-Youb Cho, null Phil-Jung Kim, null Jin-Keun Oh, null Chang-Hyuk Lee, null Jin-Yong Chung, null Sea-Chung Kim, null Woodward Yang
Publikováno v:
2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).
A 3 V EPROM circuit is implemented in an existing 0.22 /spl mu/m DRAM process with an antifuse based on destructive breakdown of the highly-reliable 6.5 nm oxide-nitride-oxide (ONO) storage capacitor dielectric. Using an internal high-voltage charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90f5ff47748ced8eb3a8b893e8ede54b
https://doi.org/10.1109/isscc.2000.839836
https://doi.org/10.1109/isscc.2000.839836
Autor:
Jae-Kyung Wee, Woodward Yang, Eui-Kyu Ryou, Joe-Sun Choi, Seung-Han Ahn, Jin-Yong Chung, Sea-Chung Kim
Publikováno v:
IEEE Journal of Solid-State Circuits; Oct2000, Vol. 35 Issue 10, p1408-1414, 7p
Autor:
Sea-Chung Kim, Wise, K.D.
Publikováno v:
IEEE Transactions on Electron Devices; 1983, Vol. 30 Issue 7, p802-810, 9p
Autor:
Joo-Sun Choi, Jae-Kyung Wee, Ho-Youb Cho, Phil-Jung Kim, Jin-Keun Oh, Chang-Hyuk Lee, Jin-Yong Chung, Sea-Chung Kim, Woodward Yang
Publikováno v:
2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056); 2000, p406-407, 2p