Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Se-Chung Oh"'
Autor:
H. M. Shin, W. S. Ham, S. S. Pyo, K. T. Nam, Y. Ji, J.H. Park, Y. G. Hong, Sung-hee Han, K. S. Suh, Joo-Hyun Jeong, Sun-Kyu Hwang, K. H. Lee, J.Y. Lee, Gitae Jeong, Se-Chung Oh, Junha Lee, H. T. Jung, S.O. Park, J. H. Bak, Dae Sin Kim, Gwan-Hyeob Koh, Jung Moo Lee, B. S. Kwon, M. K. Cho, Yoon-Jong Song, Yong-Jae Kim
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We present the world-first demonstration of 28-nm embedded MRAM (eMRAM) for frame buffer memory, highlighting the smallest macro size (0.08 mm2/Mb) reported to date. Compared to SRAM that is commonly used for frame buffer memory, eMRAM provides 47% a
Autor:
J.H. Park, E. S. Jung, Kyu-Charn Park, Yoon-Jong Song, Se-Chung Oh, Hyeongsun Hong, Junha Lee, H. C. Shin, Dongsoo Lee, Sun-Kyu Hwang, D. E. Jeong, K. H. Lee, Byoung-Jae Bae, Y. Ji, Bum-seok Seo, Gwan-Hyeob Koh, Gitae Jeong, Kwan-Heum Lee, Ki-Hyun Hwang, You Kyoung Lee, H. K. Kang, Sung-hee Han, Kwang-Pyuk Suh, S.O. Park, O. I. Kwon
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We successfully demonstrated the manufacturability of 8Mb STT-MRAM embedded in 28nm FDSOI logic platform by achieving stable functionality and robust package level reliability. Read margin were greatly improved by increasing TMR value and also reduci
Autor:
Jang Eun Lee, Se Chung Oh, Mairbek Chshiev, Hyun-Woo Lee, Yo Chan Kong, Younghun Jo, Seung-Young Park, Aurelien Manchon, Bernard Dieny, Kyung Tae Nam, Jae-Ho Han, Kyung Jin Lee
Publikováno v:
Nature Physics. 5:898-902
Spin-transfer torque allows the magnetization of nanopillar devices to be switched electrically. Incorporating asymmetries into the design of such a device generates a linear out-of-plane torque component that could help prevent the unwanted spontane
Autor:
Keon-Soo Kim, Won-Jin Kim, Jong-Shik Yoon, Min-Kyu Kang, Ju Hyun Kim, J. H. Kim, S. W. Nam, Shin-Ae Lee, Se-Chung Oh, Ung-hwan Pi, Y. H. Kim, E. S. Jung, W. C. Lim, S.Y. Kim, S. Jeong, S. H. Park, Young-wook Park, S.O. Park, Yong-Jun Lee, J.H. Park, Wanki Kim, H. K. Kang, Jongyeon Lee
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
Scalability of interface driven perpendicular magnetic anisotropy (i-PMA) magnetic tunnel junctions (MTJs) has been improved down to 1X node which verifies STT-MRAM for future standalone memory. With developing a novel damage-less MTJ patterning proc
Autor:
Taek Dong Lee, Se Chung Oh
Publikováno v:
IEEE Transactions on Magnetics. 37:1504-1507
The effects of a novel VMn underlayer on magnetic properties of a CoCrPt/VMn longitudinal medium were studied and compared with those of a CoCrPt/Cr medium. It was found that the VMn film had [200] preferred orientation and the lattice constant was a
Autor:
K.T. Nam, Jun-Soo Bae, H.S. Kim, Nae-In Lee, H. K. Kang, Y.K. Ha, U-In Chung, Se-Chung Oh, Ji Eun Lee, Hoonki Kim, S.O. Park, June Moon
Publikováno v:
IEEE Transactions on Magnetics. 41:2661-2663
Toggle switching mode MRAM is tested and characterized with respect to the free- and pinned-layer material and thickness. With magnetization curves, we were able to find the optimum thickness combinations of free-layer and spacer materials. For CoFeB
Publikováno v:
IEEE Transactions on Magnetics. 40:164-166
It was found that a reduction in M/sub r/t can be obtained in the new antiferromagnetically coupled (AFC) medium with a CrMo spacer layer due to antiferromagnetic (AF) coupling, which is similar to the conventional AFC medium with a Ru spacer layer.
Autor:
Se-Chung Oh, Chilhee Chung, Keon-Soo Kim, J.H. Park, Yongjik Park, Yong-Jun Lee, Jung-hyeon Kim, Hong-Hyun Park, S. Choi, S.O. Park, H. K. Kang, Yung-Sang Kim, Sungho Park, Woojin Kim, Hong-jae Shin, JoonMyoung Lee, Hyung-Shin Kwon, Joo-Hyun Jeong, W. C. Lim, Hyoshin Ahn, Kyoung-Soo Kim
Publikováno v:
2011 International Electron Devices Meeting.
In this article, we report the first experimental demonstration of sub-20nm MTJ cells for investigating the downscaling feasibility of spin-transfer torque (STT) MRAM, one of the most promising candidates to replace conventional memories. We demonstr
Autor:
JoonMyoung Lee, S. Choi, Joo-Hyun Jeong, Woo-Seop Kim, W. C. Lim, Yun-Seung Shin, Chilhee Chung, Se-Chung Oh, Yeshin Kim, Hong-jae Shin
Publikováno v:
2010 International Electron Devices Meeting.
Feasibility of STT-MRAM (Spin-Transfer Torque Magnetic Random Access Memory) as next generation non-volatile memory has been tested for the replacement of DRAM and NOR Flash. For competition with DRAM, STT-MRAM unit cell size should be reduced to 6
Autor:
In-Seok Yeo, Kuang-woo Nam, S.Y. Lee, D-J Kim, Jun-Ho Suwon Jeong, Y. Kim, U. I. Chung, Se-Chung Oh, June Moon, Ju-hyang Lee, Woo-Seop Kim
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.