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Publikováno v:
Thin Solid Films. 337:200-202
The electrical and optical properties of the a-Si:H films deposited by inductively-coupled plasma chemical vapour deposition (ICP-CVD) have been investigated. The ICP-CVD a-Si:H films deposited at 30 mTorr exhibited the deposition rate of 0.9 A/s and
Publikováno v:
SID Symposium Digest of Technical Papers. 29:379
A novel self-aligned coplanar a-Si:H TFT was developed using the three stacked layers of thin a-Si: H, silicon-nitride (SiNx), and a-Si:H. After patterning thin a-Si:H and SiNx, the structure was ion-doped and then Ni layer was deposited. The fabrica