Zobrazeno 1 - 10
of 174
pro vyhledávání: '"Se Chung"'
Autor:
H. M. Shin, W. S. Ham, S. S. Pyo, K. T. Nam, Y. Ji, J.H. Park, Y. G. Hong, Sung-hee Han, K. S. Suh, Joo-Hyun Jeong, Sun-Kyu Hwang, K. H. Lee, J.Y. Lee, Gitae Jeong, Se-Chung Oh, Junha Lee, H. T. Jung, S.O. Park, J. H. Bak, Dae Sin Kim, Gwan-Hyeob Koh, Jung Moo Lee, B. S. Kwon, M. K. Cho, Yoon-Jong Song, Yong-Jae Kim
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We present the world-first demonstration of 28-nm embedded MRAM (eMRAM) for frame buffer memory, highlighting the smallest macro size (0.08 mm2/Mb) reported to date. Compared to SRAM that is commonly used for frame buffer memory, eMRAM provides 47% a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e306516ec595437337cea02f0d2cbc6a
https://doi.org/10.1109/iedm13553.2020.9372040
https://doi.org/10.1109/iedm13553.2020.9372040
Autor:
J.H. Park, E. S. Jung, Kyu-Charn Park, Yoon-Jong Song, Se-Chung Oh, Hyeongsun Hong, Junha Lee, H. C. Shin, Dongsoo Lee, Sun-Kyu Hwang, D. E. Jeong, K. H. Lee, Byoung-Jae Bae, Y. Ji, Bum-seok Seo, Gwan-Hyeob Koh, Gitae Jeong, Kwan-Heum Lee, Ki-Hyun Hwang, You Kyoung Lee, H. K. Kang, Sung-hee Han, Kwang-Pyuk Suh, S.O. Park, O. I. Kwon
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We successfully demonstrated the manufacturability of 8Mb STT-MRAM embedded in 28nm FDSOI logic platform by achieving stable functionality and robust package level reliability. Read margin were greatly improved by increasing TMR value and also reduci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d9850cefc79bd42bf976fcde3ed7b8
https://doi.org/10.1109/iedm.2018.8614635
https://doi.org/10.1109/iedm.2018.8614635
Autor:
Yongsung Ji, Gitae Jeong, Joo-Chan Kim, Seungbae Lee, Daesop Lee, Yong-Kyu Lee, Hyun-Taek Jung, Ki-Chul Park, Hwang So-Hee, Artur Antonyan, Kwanhyeob Koh, J.W. Lee, Yoon-Jong Song, Hyeongsun Hong, Kilho Lee, Ung-hwan Pi, Ki-Hyun Hwang, Jung-Man Lim, Jong Shik Yoon, Hyunsung Jung, Daehyun Jang, Mark Pyo, Bo-Young Seo, SangHumn Lee, E. S. Jung, Byoung-Jae Bae, Hyunchul Shin, Oh Se-Chung
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
We demonstrate, for the first time, 28-nm embedded STT-MRAM operating at full industrial temperature range (−40~125°C) with >1E+6 endurance and >10 year retention for high speed MCU/IoT application. Robust cell operation is also demonstrated after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f4b5a2ce996887b82fc42cbf625362c
https://doi.org/10.1109/vlsit.2018.8510623
https://doi.org/10.1109/vlsit.2018.8510623
Autor:
Oh, Se-Chung1, Park, Seung-Young2, Manchon, Aurélien3, Chshiev, Mairbek4, Han, Jae-Ho5, Lee, Hyun-Woo5, Lee, Jang-Eun6, Nam, Kyung-Tae6, Jo, Younghun7, Kong, Yo-Chan8, Dieny, Bernard4, Lee, Kyung-Jin8
Publikováno v:
Nature Physics. Dec2009, Vol. 5 Issue 12, p898-902. 5p. 4 Graphs.
Autor:
Jang Eun Lee, Se Chung Oh, Mairbek Chshiev, Hyun-Woo Lee, Yo Chan Kong, Younghun Jo, Seung-Young Park, Aurelien Manchon, Bernard Dieny, Kyung Tae Nam, Jae-Ho Han, Kyung Jin Lee
Publikováno v:
Nature Physics. 5:898-902
Spin-transfer torque allows the magnetization of nanopillar devices to be switched electrically. Incorporating asymmetries into the design of such a device generates a linear out-of-plane torque component that could help prevent the unwanted spontane
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f0309ecd9a02dce3c24eb00269fefc2
https://doi.org/10.1038/nphys1427
https://doi.org/10.1038/nphys1427
Autor:
Keon-Soo Kim, Won-Jin Kim, Jong-Shik Yoon, Min-Kyu Kang, Ju Hyun Kim, J. H. Kim, S. W. Nam, Shin-Ae Lee, Se-Chung Oh, Ung-hwan Pi, Y. H. Kim, E. S. Jung, W. C. Lim, S.Y. Kim, S. Jeong, S. H. Park, Young-wook Park, S.O. Park, Yong-Jun Lee, J.H. Park, Wanki Kim, H. K. Kang, Jongyeon Lee
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
Scalability of interface driven perpendicular magnetic anisotropy (i-PMA) magnetic tunnel junctions (MTJs) has been improved down to 1X node which verifies STT-MRAM for future standalone memory. With developing a novel damage-less MTJ patterning proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd261df88649d6b28565d096db8e59f3
https://doi.org/10.1109/vlsit.2014.6894366
https://doi.org/10.1109/vlsit.2014.6894366
Autor:
Taek Dong Lee, Se Chung Oh
Publikováno v:
IEEE Transactions on Magnetics. 37:1504-1507
The effects of a novel VMn underlayer on magnetic properties of a CoCrPt/VMn longitudinal medium were studied and compared with those of a CoCrPt/Cr medium. It was found that the VMn film had [200] preferred orientation and the lattice constant was a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d7f9ce3d621556466cfa923e0fc6954
https://doi.org/10.1109/20.950884
https://doi.org/10.1109/20.950884
Autor:
K.T. Nam, Jun-Soo Bae, H.S. Kim, Nae-In Lee, H. K. Kang, Y.K. Ha, U-In Chung, Se-Chung Oh, Ji Eun Lee, Hoonki Kim, S.O. Park, June Moon
Publikováno v:
IEEE Transactions on Magnetics. 41:2661-2663
Toggle switching mode MRAM is tested and characterized with respect to the free- and pinned-layer material and thickness. With magnetization curves, we were able to find the optimum thickness combinations of free-layer and spacer materials. For CoFeB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd9c3855b264f05efca1b719838aaf09
https://doi.org/10.1109/tmag.2005.854935
https://doi.org/10.1109/tmag.2005.854935
Publikováno v:
IEEE Transactions on Magnetics. 40:164-166
It was found that a reduction in M/sub r/t can be obtained in the new antiferromagnetically coupled (AFC) medium with a CrMo spacer layer due to antiferromagnetic (AF) coupling, which is similar to the conventional AFC medium with a Ru spacer layer.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31b78228332a8e4d9ca08ecafa290bbc
https://doi.org/10.1109/tmag.2003.816297
https://doi.org/10.1109/tmag.2003.816297
Autor:
Se-Chung Oh, Chilhee Chung, Keon-Soo Kim, J.H. Park, Yongjik Park, Yong-Jun Lee, Jung-hyeon Kim, Hong-Hyun Park, S. Choi, S.O. Park, H. K. Kang, Yung-Sang Kim, Sungho Park, Woojin Kim, Hong-jae Shin, JoonMyoung Lee, Hyung-Shin Kwon, Joo-Hyun Jeong, W. C. Lim, Hyoshin Ahn, Kyoung-Soo Kim
Publikováno v:
2011 International Electron Devices Meeting.
In this article, we report the first experimental demonstration of sub-20nm MTJ cells for investigating the downscaling feasibility of spin-transfer torque (STT) MRAM, one of the most promising candidates to replace conventional memories. We demonstr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dd9f68d7149fb0f719eb2b7f1c91075
https://doi.org/10.1109/iedm.2011.6131602
https://doi.org/10.1109/iedm.2011.6131602