Výsledky vyhledávání - "Sd. Kashif Irfan"

Estimation of Write Noise Margin for 6t SRAM Cell in CMOS 45nm technology

Autor: Sd. Kashif Irfan, P. Sai Charan, Hima Bindu Katikala, P. Raja Rajeswari, G. Ramana Murthy

Publikováno v: Journal of University of Shanghai for Science and Technology. 23:211-215

For high speed application the static random access memory is mostly demandable. Such kind of device should possess additive parameters that can withstand during transistor scaling process. Their exist static noise margin (SNM) which degrades the dev

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d638ee4689cc1099a8f20d99aad3bff3
https://doi.org/10.51201/jusst/21/04268

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