Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Scrymgeour, David A."'
Autor:
Berg, Morgann, Smith, Sean W., Scrymgeour, David A., Brumbach, Michael T., Lu, Ping, Dickens, Sara M., Michael, Joseph R., Ohta, Taisuke, Bussmann, Ezra, Hjalmarson, Harold P., Schultz, Peter A., Clem, Paul G., Hopkins, Matthew M., Moore, Christopher H.
Structural disorder causes materials surface electronic properties, e.g. work function ($\phi$) to vary spatially, yet it is challenging to prove exact causal relationships to underlying ensemble disorder, e.g. roughness or granularity. For polycryst
Externí odkaz:
http://arxiv.org/abs/2112.14847
Autor:
Halsey, Connor, Depoy, Jessica, Campbell, DeAnna M., Ward, Daniel R., Anderson, Evan M., Schmucker, Scott W., Ivie, Jeffrey A., Gao, Xujiao, Scrymgeour, David A., Misra, Shashank
As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped pho
Externí odkaz:
http://arxiv.org/abs/2110.11580
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B July 2024 552
Autor:
Ward, Daniel R., Marshall, Michael T., Campbell, DeAnna M., Lu, Tzu-Ming, Koepke, Justin C., Scrymgeour, David A., Bussmann, Ezra, Misra, Shashank
We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the S
Externí odkaz:
http://arxiv.org/abs/1708.05411
Publikováno v:
Microscopy & Microanalysis; 2024 Supplement, Vol. 30, p1-4, 4p
Publikováno v:
Phys. Rev. B 71, 184110-1/13 (2005) .
A phenomenological treatment of domain walls based on the Ginzburg-Landau-Devonshire theory is developed for uniaxial, trigonal ferroelectrics lithium niobate and lithium tantalate. The contributions to the domain wall energy from polarization and st
Externí odkaz:
http://arxiv.org/abs/cond-mat/0503312
Publikováno v:
Phys. Rev. B 72, 024103 (2005)
Surprising asymmetry in the local electromechanical response across a single antiparallel ferroelectric domain wall is reported. Piezoelectric force microscopy is used to investigate both the in-plane and out-of- plane electromechanical signals aroun
Externí odkaz:
http://arxiv.org/abs/cond-mat/0503230
Akademický článek
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Akademický článek
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Chemical kinetics and mass transport effects in solution-based selective-area growth of ZnO nanorods
Autor:
Coltrin, Michael E., Hsu, Julia W.P., Scrymgeour, David A., Creighton, J. Randall, Simmons, Neil C., Matzke, Carolyn M.
Publikováno v:
In Journal of Crystal Growth 2008 310(3):584-593