Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Scott Sweetland"'
Autor:
Ray Kallaher, J. Diaz, John D. Blevins, Craig McGray, Scott Sweetland, P.C. Chao, Carlton T. Creamer, Glen D. Via, Kanin Chu
Publikováno v:
MRS Advances. 1:147-155
A new device-first low-temperature bonded gallium nitride (GaN)-on-diamond high-electronic mobility transistor (HEMT) technology with state-of-the-art, radio frequency (RF) power performance is described. In this process, the devices were first fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e29189623c3505644338c5265ae3090f
https://doi.org/10.1557/adv.2016.176
https://doi.org/10.1557/adv.2016.176
Autor:
Bernard J. Schmanski, Scott Sweetland, J. Diaz, John D. Blevins, Thomas Yurovchak, Pane C. Chao, Craig McGray, Carlton T. Creamer, Raymond L. Kallaher, Kenneth K. Chu, Glen D. Via
Publikováno v:
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
We report recent progress on GaN-on-diamond high-electron-mobility transistors (HEMTs) fabricated by low-temperature device transfer. The devices were first fabricated on a GaN-on-SiC epitaxial wafer and were subsequently separated from the SiC and b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e33ad9f57381a4f3a7766de25af2723
https://doi.org/10.1109/csics.2015.7314511
https://doi.org/10.1109/csics.2015.7314511
Autor:
Scott Sweetland, Patrick McCluskey, Bernard J. Schmanski, Geoff Campbell, Thomas Yurovchak, Kenneth K. Chu, Carlton T. Creamer, Michael M. Ohadi, P.C. Chao, Henry Eppich
Publikováno v:
2014 Lester Eastman Conference on High Performance Devices (LEC).
In this work, we report on an innovative approach which integrates GaN-on-Diamond microstrip MMICs with a state-of-the-art microchannel cooler and provides a significant thermal advantage for high power GaN applications. Specifically, we describe eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3235deea39f54d30fb71f3ff9718c69d
https://doi.org/10.1109/lec.2014.6951559
https://doi.org/10.1109/lec.2014.6951559
Autor:
Thomas Yurovchak, Pane C. Chao, J. Diaz, Scott Sweetland, Carlton T. Creamer, Craig McGray, Raymond L. Kallaher, Kenneth K. Chu
Publikováno v:
2014 Lester Eastman Conference on High Performance Devices (LEC).
We report the first demonstration of GaN-on-diamond RF power transistors produced by low-temperature substrate bonding technology. GaN high-electron-mobility transistors (HEMTs) are lifted from the original SiC substrate post fabrication and transfer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca23fcb0f89e4005114ad171fb3a487b
https://doi.org/10.1109/lec.2014.6951558
https://doi.org/10.1109/lec.2014.6951558