Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Scott P. Doran"'
Autor:
Theodore H. Fedynyshyn, Roger F. Sinta, Michael Sworin, Russell B. Goodman, Roderick R. Kunz, William A. Mowers, Scott P. Doran
Publikováno v:
SPIE Proceedings.
Lithography at 157nm represents the next evolutionary step in optical lithography and is clearly seen as the likely successor to 193nm lithography. If successful, the photoresists used for this technology must be initially capable of 100nm resolution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a032f37125db664568cd5d2cdcff2dc
https://doi.org/10.1117/12.436859
https://doi.org/10.1117/12.436859
Autor:
Roger F. Sinta, Egon Matijević, Scott P. Doran, Ivan Sondi, Theodore H. Fedynyshyn, Russell B. Goodman, Michael Sworin
Publikováno v:
SPIE Proceedings.
In order to increase plasma etch selectivity in traditional single layer organic resists SiO 2 nanoparticles have been added to typical 248-nm resist formulations. Formulation modifications are necessary due to the dissolution acceleration effect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd47d22f7de2f25e4f95355e7b60c6b3
https://doi.org/10.1117/12.436860
https://doi.org/10.1117/12.436860
A frequency selective surface (FSS) structure has been fabricated for use in a thermophotovoltaic system. The FSS provides a means for reflecting the unusable light below the bandgap of the thermophotovoltaic cell while transmitting the usable light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2250d83b514294709f1619faf819f5d8
https://doi.org/10.2172/821683
https://doi.org/10.2172/821683
Autor:
Roderick R. Kunz, Theodore H. Fedynyshyn, Michele L. Lind, Russell B. Goodman, Jane E. Curtin, Scott P. Doran
Publikováno v:
Advances in Resist Technology and Processing XVII.
Lithography at 157 nm represents the next evolutionary step in the Great Optical Continuum and is currently under investigation as a possible successor to 193-nm lithography. If successful, the photoresists used for this technology must be initially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38a0f5d0f2e1ee66e9f51d400ea5fdd2
https://doi.org/10.1117/12.388317
https://doi.org/10.1117/12.388317
Resolution in traditional single layer organic resists has been limited by the inability to image at aspect ratios (resist height to image width) of much greater than 3:1. Unless plasma etch selectivity increases several fold (an unlikely event with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::865ba69147e618777504c68b5494b370
https://www.bib.irb.hr/74625
https://www.bib.irb.hr/74625
Autor:
Theodore M. Lyszczarz, Scott P. Doran, Michele L. Lind, D. M. Lennon, William F. DiNatale, Jeff Meute, Charles A. Sauer, Theodore H. Fedynyshyn
Publikováno v:
SPIE Proceedings.
We have surveyed the commercial resist market with the dual purpose of identifying diazoquinone/novolac based resists that have potential for use as e-beam mask making resists and baselining these resists for comparison against future mask making res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7a7e5af69d53030a55ebc51dde216b5
https://doi.org/10.1117/12.373357
https://doi.org/10.1117/12.373357
Publikováno v:
SPIE Proceedings.
A phase-shift focus monitor reticle designed for 193-nm was characterized on a 0.5-NA 193-nm projection lens. Calibration data were obtained and compared to simulations of the specific lens used. Using a thinned single-layer resist, feature sizes of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae4279f642eecc8f3d2f9ac3f17adace
https://doi.org/10.1117/12.354298
https://doi.org/10.1117/12.354298
Autor:
Susan G. Cann, Roderick R. Kunz, Scott P. Doran, Jane E. Curtin, Theodore M. Lyszczarz, Lynn M. Eriksen, Anthony R. Forte, Carla M. Nelson-Thomas, Susan C. Palmateer, Margaret B. Stern
Publikováno v:
SPIE Proceedings.
We have characterized line-edge roughness in single-layer, top-surface imaging, bilayer and trilayer resist schemes. The results indicate that in dry developed resists there is inherent line-edge roughness which results from the etch mask, resist (pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::516c92f2a6660131de63d61372cda5f5
https://doi.org/10.1117/12.312395
https://doi.org/10.1117/12.312395
Autor:
Michael Fritze, Roderick R. Kunz, Scott P. Doran, Mordechai Rothschild, Jan H. C. Sedlacek, Ray S. Uttaro, Daniel A. Corliss
Publikováno v:
SPIE Proceedings.
The performance of argon fluoride excimer lasers is an important issue in determining the practical feasibility of 193-nm exposure systems. This paper presents a summary of the experience gained at MIT Lincoln Laboratory regarding the long-term perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea1d86daf02206ddd1f0a1eb87501c8c
https://doi.org/10.1117/12.276008
https://doi.org/10.1117/12.276008
Publikováno v:
SPIE Proceedings.
The local modification of an integrated circuit (IC) requires in general the availability of three generic processes. First, a method for cutting conductors must be provided. Second, a process for depositing new conductors must be available. Finally,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54eb3502ba6ba55e057b42c657069c82
https://doi.org/10.1117/12.51010
https://doi.org/10.1117/12.51010