Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Scott Kisting"'
Autor:
Duane Romer, Sue McNamara, Greg Prokopowicz, Xiang Qian Liu, Mark S. Oliver, Seiji Inaoka, Matthew Yonkey, Rosemary Bell, Lynne K. Mills, Raymond Thibault, Joe Lachowski, Kevin Wang, Scott Kisting, Michael K. Gallagher, Kim Sang Ho, Eric Huenger
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2013:001559-001584
The advanced packaging application space continues to evolve as mobile devices pack more and more features into a limited space. This feature concentration is causing a deviation from the conventional shrinkage pathway predicted by Moore's law which,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ca910036b9c85a309d4086b9a24ff85
https://doi.org/10.4071/2013dpc-wp25
https://doi.org/10.4071/2013dpc-wp25
Autor:
Lynne K. Mills, Louks David H, Joe Lachowski, Matthew T. Bishop, Greg Prokopowicz, Eric Huenger, Christopher J. Tucker, Elissei Iagodkine, Zidong Wang, Zhifeng Bai, Michael K. Gallagher, Mark S. Oliver, Kevin Wang, Scott Kisting, Raymond Thibault
Publikováno v:
International Symposium on Microelectronics. 2013:000067-000071
3D IC integration based on TSV technology has been recognized as a key enabler for next generation of electronic devices with reduced size factor and improved performances. The adoption of 3D-TSV technology also requires the development of innovative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c91d28c004069d606c44eb7671c6846
https://doi.org/10.4071/isom-2013-ta31
https://doi.org/10.4071/isom-2013-ta31
Autor:
Joe Lachowski, Michael K. Gallagher, Masaki Kondoh, Lynne K. Mills, Greg Prokopowicz, Eric Huenger, Ray Thibault, Scott Kisting
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2012:000986-001015
As advanced packaging application space evolves and continues to deviate from the conventional shrinkage pathway predicted by Moore's law, material suppliers need to continue to work with OEMs, OSATs and Foundries to identify specific opportunities.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12cfe524b32a8e3a4ae3d7a19016ada1
https://doi.org/10.4071/2012dpc-tp25
https://doi.org/10.4071/2012dpc-tp25
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2011:000666-000698
To increase performance of semiconductor devices advances in packaging such as chip stacking (3D) and silicon carrier technologies (SoC) are being developed. Adaptation of these packaging fabrication methods offers the ability to incorporate function
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5bbd3142243664b64e784593cc0a4f
https://doi.org/10.4071/2011dpc-ta32
https://doi.org/10.4071/2011dpc-ta32
Autor:
K. Ober, Yongfu Li, Dan Scheck, S. Thurston, Steve Rozeveld, J. Curphy, Kayla J Baranek, Jason Folkenroth, E. Beach, T. M. Stokich, Edmund J. Stark, T. Richardson, Jack E. Hetzner, Albert Charles Marie Achen, Scott Kisting, Ying-Hung So
Publikováno v:
Scopus-Elsevier
A positive-tone and aqueous-base-developable benzo- cyclobutene (BCB)-based dielectric material curable in air (CYCLOTENE * AD6000 series Advanced Electronics Res- ins) is described in this paper. The prepolymer is made from divinylsiloxane bisbenzoc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63e992816896da3d42fb3d7b31e64fc2
https://doi.org/10.1109/ectc.2005.1441427
https://doi.org/10.1109/ectc.2005.1441427
Autor:
Mitchell G. Dibbs, Dean M. Welsh, David J. Brennan, Feng Shaoguang, Debra H. Stutts, James P. Godschalx, Paul H. Townsend, Jeff M. Shaw, Jessica L. Miklovich, Scott Kisting, Yu Chen, Gary E. Spilman
Publikováno v:
MRS Proceedings. 814
New poly(fluorene-thiophene) alternating copolymers are described in which either the dioctylfluorene or bithiophene units in poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) are replaced by other fluorene or thiophene-based groups, respectively. Imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::449ef4681a41c850f7b202db623a3b76
https://doi.org/10.1557/proc-814-i12.1
https://doi.org/10.1557/proc-814-i12.1
Autor:
Donald L. Schmidt, K. Berry, Scott Kisting, T. M. Stokich, M. T. Bernius, Paul H. Townsend, Donald Frye, M. Lanka, D. C. Burdeaux
Publikováno v:
MRS Proceedings. 323
This work examines the adhesion of coatings derived from divinylsiloxane bisbenzocyclobutene, mixed stereo and positional isomers of 1,3-bis(2-bicyclo[4.2.0]octa-1,3,5-trien-3-ylethenyl)-1,1,3,3-tetramethyl disiloxane (CAS 117732–87–3), on oxidiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01eecd03f243f06d8083e465afb53722
https://doi.org/10.1557/proc-323-365
https://doi.org/10.1557/proc-323-365
Autor:
Tobias Baumgartner, Edmund J. Stark, Ying-Hung So, Dan Scheck, Scott Kisting, Michael Toepper, Kayla J Baranek
Publikováno v:
ECS Meeting Abstracts. :699-699
A self-priming and photosensitive aqueous-base-developable benzocyclobutene (BCB)-based dielectric material curable in air is described. The polymer is made from divinylsiloxane benzocyclobutene and BCB-acrylic acid. Patterned films have high resolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d51fe6ea34145965644627b235e60e9
https://doi.org/10.1149/ma2007-01/14/699
https://doi.org/10.1149/ma2007-01/14/699
Autor:
Yongfu Li, Ying Hung So, Jason Folkenroth, Kayla J Baranek, Dan Scheck, E. Beach, Albert Charles Marie Achen, Edmund J. Stark, Jack E. Hetzner, Scott Kisting
Publikováno v:
SID Symposium Digest of Technical Papers. 37:424
A self-priming and photosensitive aqueous-base-developable benzocyclobutene (BCB)-based dielectric material curable in air is described. Patterned films have high resolution. Whether cured in nitrogen or in air, the formulation produces a film with o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15e17b168d18c534069c110aa1338563
https://doi.org/10.1889/1.2433521
https://doi.org/10.1889/1.2433521