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pro vyhledávání: '"Scott Greenhorn"'
Publikováno v:
Materials, Vol 17, Iss 5, p 1135 (2024)
Amorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness and biocompatibility, making it a promising material for applications in biomedical device passivation. a-SiC thin film deposition has been a subject of research f
Externí odkaz:
https://doaj.org/article/3e73ec266678456ca51b656b395d56e9
Publikováno v:
Key Engineering Materials. 947:83-88
This work aims to optimize Plasma-Enhanced Chemical Vapour Deposition (PECVD) amorphous hydrogenated silicon carbide (a-SiC:H) as a conformal passivation layer for invasive microelectrode array (MEA) neural interface applications. By carefully tuning