Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Scott C. Lewis"'
Autor:
I. Ok, Samuel S. Choi, Riduan Khaddam-Aljameh, Scott C. Lewis, Charles Mackin, Wilfried Haensch, Kevin W. Brew, Victor Chan, F. Lie, Alexander Friz, Stefano Ambrogio, Marc A. Bergendahl, James J. Demarest, Geoffrey W. Burr, Akiyo Nomura, Atsuya Okazaki, Katie Spoon, Takeo Yasuda, Masatoshi Ishii, Nicole Saulnier, Ishtiaq Ahsan, Pritish Narayanan, Hsinyu Tsai, Vijay Narayanan, Hiroyuki Mori, Y. Kohda, Kohji Hosokawa
Publikováno v:
IEEE Transactions on Electron Devices. 68:6629-6636
Hardware acceleration of deep learning using analog non-volatile memory (NVM) requires large arrays with high device yield, high accuracy Multiply-ACcumulate (MAC) operations, and routing frameworks for implementing arbitrary deep neural network (DNN
Autor:
Pritish Narayanan, Katherine Spoon, Scott C. Lewis, Hsinyu Tsai, An Chen, Alexander Friz, Kohji Hosokawa, Stefano Ambrogio, Andrea Fasoli, Charles Mackin, Geoffrey W. Burr, Jose Luquin
Publikováno v:
ISCAS
By performing parallelized multiply-accumulate operations in the analog domain at the location of weight data, crossbar-array "tiles" of analog non-volatile memory (NVM) devices can potentially accelerate the forward-inference of deep neural networks
Autor:
Scott C. Lewis, Atsuya Okazaki, Kohji Hosokawa, Junka Okazawa, Megumi Ito, Wanki Kim, Masatoshi Ishii, U. Shin, Wilfried Haensch, Matthew J. BrightSky, Malte J. Rasch, Akiyo Nomura, Sungchul Kim
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
A fully silicon-integrated restricted Boltzmann machine (RBM) with event-driven contrastive divergence (eCD) algorithm is implemented using novel stochastic leaky integrate-and-fire (LIF) neuron circuits and 6-transistor/2- PCM-resistor (6T2R) unit c
Autor:
Scott C. Lewis, Hung-Yang Chang, Hsinyu Tsai, Geoffrey W. Burr, Nathan C. P. Farinha, An Chen, Pritish Narayanan, Stefano Ambrogio, Kohji Hosokawa, Charles Mackin
Publikováno v:
IBM Journal of Research and Development. 63:8:1-8:14
In this article, we present innovative microarchitectural designs for multilayer deep neural networks (DNNs) implemented in crossbar arrays of analog memories. Data is transferred in a fully parallel manner between arrays without explicit analog-to-d
Autor:
Pritish Narayanan, Robert M. Shelby, Hsinyu Tsai, Kohji Hosokawa, Geoffrey W. Burr, Stefano Ambrogio, Scott C. Lewis
Publikováno v:
2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).
We describe IBM's roadmap for Neuromorphic Technologies to drive next-generation cognitive computing, ranging from nanodevice-based hardware for accelerating well-known supervised-learning algorithms (which happen to rely on static, labeled data), to
Autor:
Jack Morrish, Thomas M. Maffitt, G.F. Close, Richard C. Jordan, Scott C. Lewis, Urs Frey, Evangelos Eleftheriou, Christoph Hagleitner, Matt BrightSky, C. Lam
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 60:1521-1533
A fully integrated 256-Mcell multi-level cell (MLC) phase-change memory (PCM) chip in 90-nm CMOS technology is presented. The on-chip circuitry supports fast MLC operation at 4 bit/cell. A programmable digital controller is used to optimize closed-lo
Autor:
C. W. Yeh, Yu Zhu, Asit Kumar Ray, Mark D. Drapa, Chung H. Lam, Junka Okazawa, Scott C. Lewis, Sangbum Kim, Wanki Kim, Matt BrightSky, Tu-Shun Chen, Tony Perri, Robert L. Bruce, Jack Morrish, Huai-Yu Cheng, Chia-Jung Chen, Kohji Hosokawa, Wei-Chih Chien, Thomas M. Maffitt, Richard C. Jordan, Yutaka Nakamura, Hsiang-Lan Lung, Yung-Han Ho, H. Y. Ho, Christopher P. Miller, Jerry Heath
Publikováno v:
2016 IEEE 8th International Memory Workshop (IMW).
For the first time, by using a novel multiple individual bank sensing/writing and a memory bank interleave design, we demonstrate a double date rate 2 (DDR2) DRAM like interface phase-change memory (PCM) for M-type storage class memory applications .
Autor:
Richard C. Jordan, Masatoshi Ishii, Scott C. Lewis, Geoffrey W. Burr, Kohji Hosokawa, Sangbum Kim, Matthew J. BrightSky, Asit Kumar Ray, Christopher P. Miller, Jin-Ping Han, C. Lam, Wanki Kim, Norma E. Sosa, T. Perri
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We demonstrate a neuromorphic core with 64k-cell phase change memory (PCM) synaptic array (256 axons by 256 dendrites) with in-situ learning capability. 256 configurable on-chip neuron circuits perform leaky integrate and fire (LIF) and synaptic weig
Autor:
Geoffrey W. Burr, Robert M. Shelby, Pritish Narayanan, Alessandro Fumarola, Lucas L. Sanches, Kohji Hosokawa, Scott C. Lewis
Publikováno v:
IBM Journal of Research and Development. 61:11:1-11:11
By performing computation at the location of data, non-Von Neumann (VN) computing should provide power and speed benefits over conventional (e.g., VN-based) approaches to data-centric workloads such as deep learning. For the on-chip training of large
Autor:
Matthew J. Breitwisch, Tien-Yen Wang, Richard C. Jordan, Roger W. Cheek, Thomas M. Maffitt, Jackie Morrish, Hsiang-Lan Lung, Chung H. Lam, Alejandro G. Schrott, Scott C. Lewis, Jing Li, Chao-I Wu
Publikováno v:
2011 3rd IEEE International Memory Workshop (IMW).
This paper presents a novel reconfigurable sensing scheme with the flexibility to change reading precision of analog resistance levels for MLC PCM. A 2Mcell PCM chip was fabricated in 90nm CMOS technology and was tested. Operating at 8-bits precision