Výsledky vyhledávání - "Schwarz, S.U."

This paper presents the successful detection of different target-DNA concentrations using AlGaN/GaN high electron mobility field effect transistors (HEMTs). The gate was bio-functionalized with two different densities of complementary DNA before appl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______610::513a555ff75e8c5478770377d443a9a3
https://publica.fraunhofer.de/handle/publica/240450

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Sips adsorption model for DNA sensing with AlGaN/GaN high electron mobility transistors

Autor: Espinosa, N., Schwarz, S.U., Cimalla, V., Ambacher, O.

This work presents an adsorption model based on the Sips isotherm for sensing different concentrations of DNA with open gate AlGaN/GaN high electron mobility field effect transistors (HEMTs). Probe-DNA was immobilized on the transistor gate before th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______610::20cfb832ccda5df61309ff0faf0b7072
https://publica.fraunhofer.de/handle/publica/238730

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Thermal functionalization of GaN surfaces with 1-alkenes

Autor: Schwarz, S.U., Cimalla, V., Eichapfel, G., Himmerlich, M., Krischok, S., Ambacher, O.

A thermally induced functionalization process for gallium nitride surfaces with 1-alkenes is introduced. The resulting functionalization layers are characterized with atomic force microscopy and X-ray photoelectron spectroscopy and compared to refere

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______610::b55f49077cb0cbed1ebc2d9791099af4
https://publica.fraunhofer.de/handle/publica/232436

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Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well

Autor: Danhof, J., Schwarz, S.U., Meyer, T., Vierheilig, C., Peter, M.

Excitation density-dependent microphotoluminescence measurements were performed on a green light (515nm) emitting InGaN/GaN multiquantum well sample of low threading dislocation density (5x10(7) cm(2)). For the observed structure we find a different

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______610::c0fd4dfbd717eee87e6b5952cf267fad
https://publica.fraunhofer.de/handle/publica/227922

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DNA-sensor based on AlGaN/GaN high electron mobility transistor

Autor: Schwarz, S.U., Linkohr, S., Lorenz, P., Krischok, S., Nakamura, T., Cimalla, V., Nebel, C.E., Ambacher, O.

AlGaN/GaN high electron mobility transistors (HEMTs) show great promise for the realization of sensors for biomolecular, pharmaceutical and medical purposes. The high sensitivity and the stability in biological solutions are great advantages of this

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______610::8301f356ed31a5d599e9a662d593772b
https://publica.fraunhofer.de/handle/publica/225071

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